Method, system, and apparatus for resonator circuits and modulating resonators

ABSTRACT

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims priority under 35 USC 119 to the following U.S.provisional patent applications: provisional application No. 61/422,009filed Dec. 10, 2010 and entitled “METHOD, SYSTEM, AND APPARATUS FORRESONATOR CIRCUITS AND MODULATING RESONATORS”; U.S. provisionalapplication No. 61/438,204 filed Jan. 31, 2011, entitled “METHOD,SYSTEM, AND APPARATUS FOR RESONATOR CIRCUITS AND MODULATING RESONATORS”;U.S. provisional application No. 61/497,819 filed Jun. 16, 2011,entitled “METHOD, SYSTEM, AND APPARATUS FOR RESONATOR CIRCUITS ANDMODULATING RESONATORS”; U.S. provisional application No. 61/521,590filed Aug. 9, 2011, entitled “METHOD, SYSTEM, AND APPARATUS FORRESONATOR CIRCUITS AND MODULATING RESONATORS”; U.S. provisionalapplication No. 61/542,783 filed Oct. 3, 2011, entitled “METHOD, SYSTEM,AND APPARATUS FOR RESONATOR CIRCUITS AND MODULATING RESONATORS”; andU.S. provisional application No. 61/565,413 filed Nov. 30, 2011,entitled “METHOD, SYSTEM, AND APPARATUS FOR RESONATOR CIRCUITS ANDMODULATING RESONATORS”; and the contents of each provisional applicationcited above are hereby incorporated herein by reference as if set forthin full.

TECHNICAL FIELD

Various embodiments described herein relate generally to resonatorcircuits and modulating resonators, including systems, apparatus, andmethods employing resonators.

BACKGROUND INFORMATION

It may be desirable to modulate one or more resonators includingshifting its resonate and anti-resonate points and provide resonatorcircuits, the present invention provides such modulation and circuits.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a simplified block diagram of duplex signal transceiverarchitecture according to various embodiments.

FIG. 1B is a simplified diagram of an RF channel configuration accordingto various embodiments.

FIG. 1C is a simplified, partial diagram of a section of the RF channelconfiguration shown in FIG. 1B.

FIG. 1D is a simplified, partial diagram of a section of the RF channelconfiguration shown in FIG. 1B with a filter characteristic applied to afirst band according to various embodiments.

FIG. 1E is a simplified, partial diagram of a section of the RF channelconfiguration shown in FIG. 1B with a filter characteristic applied to asecond band according to various embodiments.

FIG. 1F is a simplified, partial diagram of a section of the RF channelconfiguration shown in FIG. 1B with a filter characteristic applied to asubunit or band of a first band according to various embodiments.

FIG. 1G is a simplified, partial diagram of a section of the RF channelconfiguration shown in FIG. 1B with a filter characteristic applied to asubunit or band of a second band according to various embodiments.

FIG. 2A is a block diagram of an electrical signal filter moduleincluding resonators according to various embodiments.

FIG. 2B is a block diagram of a filter module representing theelectrical elements representing the characteristics of a resonatoraccording to various embodiments.

FIGS. 2C and 2I are block diagrams of modulated or tunable resonatormodules according to various embodiments.

FIGS. 2D-H and 2J are block diagrams of tunable filter modules includingtunable or modulated resonators according to various embodiments.

FIG. 3A-3C are diagrams of capacitor modules that may be coupled to AWaccording to various embodiments.

FIG. 3D is a diagram of a tunable capacitor module that may be coupledto AW according to various embodiments.

FIG. 3E is a diagram of a tunable capacitor module that may be coupledto AW according to various embodiments.

FIG. 4 is a block diagram of fabrication configuration for a tunablefilter module including tunable resonators according to variousembodiments.

FIG. 5A is a block diagram of an electrical signal filter moduleincluding switchable resonators according to various embodiments.

FIGS. 5B-5D are block diagrams of switchable resonator modules accordingto various embodiments.

FIGS. 5E-5F are block diagrams of tunable, switchable filter modulesincluding tunable or modulated, switchable resonators according tovarious embodiments.

FIG. 5G is a block diagram of a tunable, switchable filter moduleincluding tunable or modulated resonators according to variousembodiments.

FIGS. 6A-6F are diagrams of filter responses of tunable, switchablefilter modules according to various embodiments.

FIG. 7A is a block diagram of a filter module according to variousembodiments.

FIG. 7B is a block diagram of a filter module including resonatorsaccording to various embodiments.

FIG. 8A is a block diagram of a switchable filter module according tovarious embodiments.

FIG. 8B is a block diagram of a switchable filter module includingresonators according to various embodiments.

FIG. 8C is a block diagram of a tunable, switchable filter moduleincluding tunable or modulated resonators according to variousembodiments.

FIG. 9A is a block diagram of a filter module according to variousembodiments.

FIGS. 9B-9C are block diagrams of a tunable, switchable filter moduleincluding tunable or modulated resonators according to variousembodiments.

FIGS. 10A-10B are diagrams of filter responses of tunable, switchablefilter modules according to various embodiments.

FIG. 11 is a diagram of a filter frequency response according to variousembodiments.

FIG. 12 is a flow diagram of a filter response selection methodaccording to various embodiments.

FIG. 13A is a simplified block diagram of a filtering architectureaccording to various embodiments.

FIG. 13B is a block diagram of a filter architecture including modulatedor tunable resonator modules and a resonator module according to variousembodiments.

FIG. 14A is a diagram of a filter frequency response of a resonatormodule according to various embodiments.

FIG. 14B is a diagram of a filter frequency response of a modulated ortunable resonator module according to various embodiments.

FIG. 14C is a diagram of a filter frequency response of a filterarchitecture including a modulated or tunable resonator module and aresonator module according to various embodiments.

FIG. 15A is a simplified diagram of an RF channel configurationaccording to various embodiments.

FIG. 15B is a simplified diagram of an RF channel configuration with achannel in a first mode according to various embodiments.

FIG. 15C is a simplified diagram of an RF channel configuration with achannel in a second mode according to various embodiments.

FIG. 16A is a simplified block diagram of a filtering architectureaccording to various embodiments.

FIG. 16B is a block diagram of a filter architecture includingswitchable, modulated or tunable resonator modules and a resonatormodule according to various embodiments.

FIG. 16C is a block diagram of another filter architecture includingswitchable, modulated or tunable resonator modules and a resonatormodule according to various embodiments.

FIG. 16D is a block diagram of another filter architecture includingswitchable, modulated or tunable resonator modules and a resonatormodule according to various embodiments.

FIG. 16E is a simplified block diagram of signal transceiverarchitecture according to various embodiments.

FIG. 17A is a diagram of a filter frequency response of a resonatormodule according to various embodiments.

FIG. 17B is a diagram of a filter frequency response of a switchable,modulated or tunable resonator module in a first mode according tovarious embodiments.

FIG. 17C is a diagram of a filter frequency response of a filterarchitecture including a switchable, modulated or tunable resonatormodule in a first mode and a resonator module according to variousembodiments.

FIG. 17D is a diagram of a filter frequency response of a resonatormodule according to various embodiments.

FIG. 17E is a diagram of a filter frequency response of a switchable,modulated or tunable resonator module in a second mode according tovarious embodiments.

FIG. 17F is a diagram of a filter frequency response of a filterarchitecture including a switchable, modulated or tunable resonatormodule in a second mode and a resonator module according to variousembodiments.

FIG. 17G is a diagram of a filter frequency response of a filterarchitecture including a first switchable, modulated or tunableresonator module, a first resonator module, a second switchable,modulated or tunable resonator module, and a second resonator moduleaccording to various embodiments.

FIG. 18 is a flow diagram of a combined filter configuration methodaccording to various embodiments.

FIG. 19A is a block diagram of an electrical signal filter moduleincluding resonators and diagrams of filter frequency responses ofresonators according to various embodiments.

FIG. 19B is a diagram of filter frequency responses of the electricalsignal filter module including resonators of FIG. 19A in a first,pass-band filter mode according to various embodiments.

FIG. 19C is a diagram of filter frequency responses of the electricalsignal filter module including resonators of FIG. 19A in a second, notchfilter mode according to various embodiments.

FIG. 19D is a diagram of combined filter frequency responses of theelectrical signal filter module including resonators of FIG. 19A in thefirst, pass-band filter mode according to various embodiments.

FIG. 19E is a diagram of combined filter frequency responses of theelectrical signal filter module including resonators of FIG. 19A in asecond, notch filter mode according to various embodiments.

FIG. 20A is a block diagram of a tunable filter module includingelectrical elements representing the characteristics of tunableresonators according to various embodiments.

FIG. 20B is a block diagram of another tunable filter module includingelectrical elements representing the characteristics of tunableresonators according to various embodiments.

FIG. 21A is a block diagram of an electrical signal filter moduleincluding resonators and diagrams of filter frequency responses ofresonators according to various embodiments.

FIG. 21B is a diagram of filter frequency responses of the electricalsignal filter module including resonators of FIG. 21A in a notch filtermode according to various embodiments.

FIG. 21C is a diagram of combined filter frequency responses of theelectrical signal filter module including resonators of FIG. 21A in thenotch filter mode according to various embodiments.

FIG. 22A is a diagram of a resonant frequency probably functionrepresenting manufacturing variations for an acoustic wave (AW) devicethe according to various embodiments.

FIG. 22B is a diagram of an anti-resonant frequency probably functionrepresenting manufacturing variations for an acoustic wave (AW) devicethe according to various embodiments.

FIG. 22C is a diagram of a resonant frequency function representingtemperature variations for an acoustic wave (AW) module the according tovarious embodiments.

FIG. 22D is a diagram of a capacitance per unit area probably functionrepresenting manufacturing variations for a capacitor module theaccording to various embodiments.

FIG. 23 is a block diagram of a configuration for a tunable filtermodule including tunable resonators according to various embodiments.

FIG. 24 is a flow diagram of a component modeling, manufacturing, andconfiguration method according to various embodiments.

FIG. 25A is a simplified block diagram of a signal filter architectureaccording to various embodiments.

FIG. 25B is a simplified block diagram of a signal filter architectureaccording to various embodiments.

FIG. 26A to 27C are diagrams of filter frequency responses of a signalfilter architecture according to various embodiments.

FIG. 28A is a simplified block diagram of a signal filter architectureaccording to various embodiments.

FIG. 28B is a simplified block diagram of a signal filter architectureaccording to various embodiments.

FIGS. 29A and 29B are diagrams of filter frequency responses of a signalfilter according to various embodiments.

DETAILED DESCRIPTION

FIG. 1A is a simplified block diagram of duplex signal transceiverarchitecture 10 according to various embodiments. As shown in FIG. 1A,architecture 10 includes a power amplifier module (PA) 12, signalduplexer module 20, radio frequency (RF) switch module 40, low noiseamplifier (LNA) module 14, mixer module 60A, and RF signal antenna 50.In operation a signal 8 to be transmitted on the antenna 50 may beamplified via the PA module 12, filtered by the duplexer module 20, andcoupled to the antenna 50 via the RF switch module 40. In a duplexsignal architecture a received signal on the antenna 50 may besimultaneously processed the duplexer module 20. The resultant receivesignal 24 may be amplified by the LNA module 14 and down-mixed to abaseband signal 60C via the mixer module 60A and a reference frequencysignal 60B.

FIG. 1B is a simplified diagram of an RF channel configuration 70Aaccording to various embodiments. As shown in FIG. 1B, a transmit (TX)band 73A and a receive (RX) band 73B may be located in close frequencyproximity. The TX band may have a width defined by 72A, 72B (start andend of the TX band), the RX band may have a width defined by 72C, 72D(start and end of the RX band), and the frequency separation between thebands may be the difference between 72C and 72B (start of the RX bandand end of the TX band). The TX band 73A and the RX band 73B may includea plurality of sub-bands or units 74A, 74B, 74C and 75A, 75B, and 75C asshown in FIGS. 1C to 1G.

At the antenna 50 the TX band signal energy 73A may be greater than theRX band signal energy as shown in FIGS. 1B to 1G. Such a differential insignal energy may saturate the LNA module 14 and occlude the RX signal24 in duplexed signal architecture 10. The duplexer module 20 mayinclude one or more filters (shown in FIG. 2F) to limit interference ofTX and RX signals in the TX and RX bands 73A, 73B. The combined TX andRX signal 42 may be communicated according to one or more communicationprotocol or standards including Code Division Multiple Access (“CDMA”),Wide Band Code Division Multiple Access (“W-CDMA”), WorldwideInteroperability for Microwave Access (“WIMAX”), Global System forMobile Communications (“GSM”), Enhanced Data Rates for GSM Evolution(EDGE), and other radio communication standards or protocols. Suchstandards or protocols may provide minimum signal separation orinterference mitigation requirements for communication of signals on therespective networks via an antenna 50.

The PA module 12 may also introduce noise or interface due to its falloff in power about the TX band to be amplified. The excess PA power mayinterfere with the LNA module 14 operation. A blocker signal near theTX, RX bands 73A, 73B or between same present on the antenna 50 (may bedue to other signals in the communication network) may also interferewith the LNA module 14 operation and cause loss in the RX signal 24.

Duplex systems or architecture 10 may employ filter modules andincluding duplexer modules. The duplexer modules may include knownfilter elements such as resistors, capacitors, inductors, digital signalprocessors (DSPs), and resonators. Configurations of these componentsmay form filter modules to attempt to meet or exceed adjacent channel orband interface requirements according to one or more communicationprotocols or standards. In an embodiment the channel configuration 70Amay be used for a CDMA band five (V) signals where the TX band 73Aextends from 824 to 849 MHz (72A, 72B) and the RX band 73B extends from869 to 894 MHz (72C, 72D). In this configuration, The TX band 73A and RXband 73B are 25 MHz width and separated by 20 MHz (72C minus 72B). Asshown in FIGS. 1C to 1G, the TX band 73A may include a plurality ofsub-bands 74A, 74B, 74C and the RX band 73B may including a plurality ofsub-bands 75A, 75B, 75C. In an embodiment the sub-bands may be about 1.5MHz wide (CDMA) and 5 MHz wide (W-CDMA).

In order to limit interface between adjacent bands, a filter modulehaving a frequency characteristic 76A as shown in FIG. 1D may be appliedto the TX band 73A. Similarly, a filter module having a frequencycharacteristic 76B as shown in FIG. 1E may be applied to the RX band73B. As shown in FIGS. 1D and 1E the filter characteristics 76A, 76Bideally have a large dB rollout on either side of the communicated band(pass-band). The capacitors, inductors, and resistors required for suchfilter characteristics may be large and consume significant real estatewhen constructed on a dielectric wafer as known to those of skill in theart. One or more resonators may be employed to attempt to achieve a TXor RX signal 42 filter characteristic 76A, 76B.

Resonators may include surface acoustic wave (SAW) and bulk acousticwave (BAW) devices. Such devices may be used in filters, oscillators andtransformed and commonly cause the transduction of acoustic waves. InSAW and BAW, electrical energy is transduced to mechanical energy backto electrical energy via piezoelectric materials. The piezoelectricmaterials may include quartz, lithium niobate, lithium tantalate, andlanthanum gallium silicate. One or more transverse fingers of conductiveelements may be placed in the piezoelectric materials to convertelectrical energy to mechanical energy and back to electrical energy.The SAW or resonator may include one or more one or more interdigitaltransducers (IDTs) (transverse fingers of electrical conductiveelements) for such energy conversions or transductions. A resonatorconstruction and material requirements may be more complex and expensivefor electrical signals having high frequency content such as signalstransmitted according to one or more RF communication protocols orstandards.

It may be desirable for a filter or duplexer module 20 to generatefrequency characteristics 76C, 76D specific to one or more sub-unit orbands of a TX or RX band 73A, 73B such as shown in FIGS. 1F, 1G. Suchduplexer modules 20 or filter modules may significantly suppressinterface between TX and RX bands 73A, 73B and may be required for somecommunication protocols. In order to filter one or more sub-units 74A,74B, 74C, 75A, 75B, 75C of a band 73A, 73B or different bandsselectively (such as band I to V in a CDMA system), separate filtersmodules or duplexers may be required.

FIG. 2A is a block diagram of an electrical signal filter module 90Aincluding resonators according to various embodiments. The module 90Aincludes three resonators 80A, 80B, and 80C, resistors 94A, 94B, andsignal generator 92A. In an embodiment the signal generator 92A mayrepresent a TX signal to be communicated via an antenna 50, the resistor94A may represent the load of the TX signal, and the resistor 94B mayrepresent the load of an antenna 50. In an embodiment the resonators80A, 80B, 80C form a T-shape between the signal to be transmitted andthe antenna (source load 94A and antenna load 94B). The resonators 80A,80B, 80C may be SAW devices. A resonator 80A, 80B, 80C commonly has afixed resonate frequency and anti-resonate frequency similar to a passband and stop band of a common inductor-capacitor type filter.

An acoustic wave resonator 80A, 80B, 80C may be represented bycorresponding electrical components according to various embodimentssuch as shown in FIG. 2B. As shown in FIG. 2B, a resonator 80A may berepresented by a first capacitor 82A in parallel with a series couplingof an inductor 86A, a second capacitor 82B, and a resistor 84A where thecapacitors 82A, 82B may have a capacitance of Co, Cm, respectively,inductor 86A may have an inductance of Lm and the resistor 84A may havea resistance of Rm in an embodiment. Modeling of resonators or SAWdevices via electrical components is described in the reference entitled“Surface Acoustic Wave Devices in Telecommunications: Modelling andSimulation” by Ken-Ya Hashimoto, published by Springer on Jul. 31, 2000,ISBN-10: 354067232X and ISBN-13: 978-3540672326.

The Cm and Lm may be related to the elasticity and inertia of an AW 80A,80B, 80C. Co may represent the effective capacitance of the transverseelectric fingers in the piezoelectric material of the AW 80A, 80B, 80C.Rm may represent the heat generated by mechanical motion in the AW 80A,80B, 80C (the effective quality or Q limiter of the AW). Using thevalues Co, Cm, Lm, and Rm for first capacitor, inductor 86A, secondcapacitor 82B, and resistor 84A, the resonance w_(r) and theanti-resonance w_(a) of an acoustic wave (AW) device 80A may be definedby the following equations:

$w_{r} \equiv {\frac{1}{\sqrt{L_{m}C_{m}}}\mspace{14mu}{and}\mspace{14mu} w_{a}} \equiv {\frac{1}{\sqrt{L_{m}C_{m}{C_{o}/\left( {C_{m} + C_{o}} \right)}}}.}$

Using these equations AW 80C may form a short path and the resultantfilter formed by the AW 80A, AW 80B, and AW 80C may have a pass bandabout the w_(r) of 80A, 80B and w_(a) of 80C (77C as shown in FIG. 1D),a first notch before the pass band at w_(r) of 80C (77A in FIG. 1D), anda second notch after the pass band at w_(a) of 80A, 80B (77B in FIG.1D). These resonators AW 80A, 80B, 80C resonate and anti-resonate valuesw_(r) and w_(a) are fixed as a function of the physical characteristicsof the AW 80A, 80B, 80C.

It may be desirable to shift the w_(r) and w_(a) of AW 80A, 80B, 80C toshift the pass-band or stop-bands to tune to specific sub-bands 74A,74B, 74C, 75A, 75B, 75C or different TX or RX bands 73A, 73B. It is alsonoted that the w_(r) and w_(a) of AW 80A, 80B, 80C may vary as afunction of the temperature of the AW, respectively. In such anembodiment it may be desired to correct for temperature variationsaccordingly. It is also noted that the w_(r) and w_(a) of AW 80A, 80B,80C may vary due to manufacturing variances, respectively. In such anembodiment it may be desirable to correct for manufacturing variancesaccordingly. In an embodiment various capacitors 98A may be coupled inparallel or serially with a AW 80A, 80B, 80C to be able to shift, tune,or modulate the w_(r) or w_(a) of the AW 80A, 80B, 80C and accordinglyits pass-band and stop-band(s).

FIGS. 2C and 2I are block diagrams of modulated or tunable resonatormodules 96A, 96G according to various embodiments. The module 96A shownin FIG. 2C may include a variable capacitor 98A in parallel with an AW80A. Based on the above equations, the anti-resonate w_(a) may bemodulated by the variable capacitor 98A having a capacitance C_(v)(effective Co of an AW may be Co+C_(v) for module 96A). The module 96Gshown in FIG. 2I may include a variable capacitor 98G parallel with anAW 80G and a variable capacitor 98H in series with the AW 80G. Based onthe above equations, the anti-resonate w_(a) may be modulated by thevariable capacitor 98G having a capacitance C_(v1) and the variablecapacitor 98H having a capacitance C_(v2). Similarly, the resonate w_(r)may be modulated by the variable capacitor 98H having the capacitanceC_(v2).

FIG. 2D is a block diagram of an electrical signal filter module 90Bincluding tunable or modulated resonator modules 96A, 96B, 96C accordingto various embodiments. The module 90B is similar to module 90A shown inFIG. 2A in that it includes three resonators 80A, 80B, and 80C in asimilar T-configuration where the resonators 80A, 80B, 80C have a fixedresonate frequency and anti-resonate frequency similar to a pass bandand stop band of a common inductor-capacitor type filter where theanti-resonate frequency for each resonator 80A, 80B, 80C is modulated ortuned by the variable capacitor 98A, 98B, 98C.

As noted above AW 80C may form a short path and the resultant filterformed by the AW 80A, AW 80B, and AW 80C may have a pass band about thew_(r) of 80A, 80B and w_(a) of 80C (77C as shown in FIG. 1D), a firstnotch before the pass band at w_(r) of 80C (77A in FIG. 1D), and asecond notch after the pass band at w_(a) of 80A, 80B (77B in FIG. 1D).By varying the capacitors 98A, 98B, 98C, the pass band 77C and secondnotch 77B shown in FIG. 1D may be varied.

FIGS. 2E-H are block diagrams of tunable filter modules includingtunable or modulated resonators or AW that may be employed for filteringan RX band 73B or sub-band 75A, 75B, 75C in an embodiment. As shown inFIG. 2E the tunable filter module 90C may include tunable resonate or AWmodules 96D, 96E, 96F, and 96G, resistor 94C, and resistor 94B. Similarto above, resistor 94B may represent the antenna 50 load and resistor94C may represent a signal (RX or TX) load. In an embodiment, the module90C may include two tunable shorts 96G and 96F and two tunable pass AWmodules 96D, 96E in series. Module 90C is similar to module 90A(T-configuration) with the addition of a second short 96G that includesa capacitor 98G designed to effect the anti-resonate frequency and asecond tunable capacitor 98H in series with the AW 80G to further effectthe resonate frequency of the AW 800.

FIG. 2F is a block diagram of an electrical signal filter module 90Dincluding a first tunable filter module 95A and a second tunable filtermodule 95B according to various embodiments. The module 90D includes afirst filter module 95B, a second filter module 95B, a first signalsource 92A and a resistor load 94A, a second signal source 92B andresistor load 94C, and antenna load resistor 94B. Module 95A is similarto module 90B and module 95B is similar to module 90C where module 95Ais a T-configuration module and module 95B is a modified T-configurationwith a second short (with a series tunable capacitor 98H). In anembodiment the module 90D may be employed as a tunable duplexer 20 inFIG. 1A.

FIGS. 2G, 2H, 2J are block diagrams of tunable filter modules 95C, 95D,95E including tunable or modulated resonators or AW that may be employedfor filtering a RX band 73B or sub-band 75A, 75B, 75C in an embodiment.As shown in FIG. 2G the tunable filter module 90E may include tunableresonate or AW modules 96D, 96G, 96F, resistor 94C, resistor 94B, andeffective capacitance 97A, 97B. Similar to above, resistor 94B mayrepresent the antenna 50 load and resistor 94C may represent a signal(RX or TX) load and 92B a signal source. In an embodiment, the module90E may include two shorts 96G and 96F and a single tunable AW module96D in series with the loads 94C, 94B. Module 90E is similar to module90D with the elimination of the second module 96E in series with thefirst module 96D.

As shown in FIG. 2H the tunable filter module 90F may include tunableresonate or AW modules 96D, 96G, 96F, 96H, tunable capacitor 98H,resistor 94C, resistor 94B, and effective capacitance 97A, 97B. Similarto above, resistor 94B may represent the antenna 50 load and resistor94C may represent a signal (RX or TX) load and 92B a signal source. Inan embodiment, the module 90F may include three tunable shorts 96G, 96F,and 96H and a single tunable AW module 96D in series with the loads 94C,94B. Module 90F is similar to module 90F with the addition of a thirdshort module 96H.

As shown in FIG. 2J the tunable filter module 95E may include tunableresonate AW modules 96B, 96F, and a plurality of AW modules 80A, 80C,80D, 80E, 80G, 80H, 80I. In the filter module 95E, tunable resonate AWmodules 96B, 96F, and a plurality of AW modules 80A, 80C, 80D, 80E, 80G,80H, 80I form a series of “T” sub-filters such as 80A, 96B, and 80C. Asexplained above each T sub-filter may create a frequency response withtwo passband (AW 80A, 96B) and a stopband (80C). In the embodiment oneor more AW 80A to 80I may not be tunable (AW modules 80A, 80C, 80D, 80E,80G, 80H, 80I in FIG. 2J) while one or more AW 80A to 80I may be tunable(80B and 80F in FIG. 2J). A tunable capacitor 98B, 98F may be coupled(in parallel) to a AW 80A to 80I when one or more AW 80A to 80I may bedesirably tunable to modulate the AW 80A to 80I for temperature orprocess variations or provide frequency adjustments to the AW 80A to80I.

FIG. 3A-3C are diagrams of capacitor modules according to variousembodiments where the modules may be used as capacitors 98A to 98G (inparallel to an AW 80A to 80F) and 98H (in series with an AW 80G). Asshown in FIG. 3C, the module 120C includes a single capacitor 104A. Thecapacitor 104A capacitance may be determined after the physicalcharacteristics of an AW 80A to 80G are measured (to account for processvariations or operating temperature variance). The capacitor 104Acapacitance may also be varied for different TX or RX bands 73A, 73B tobe filtered by the module 96A to 96G including the module 120C.

As shown in FIG. 3B, the module 120B includes the capacitor 104A and asecond capacitor 104B and resistor 106A parallel to the first capacitor104A. The additional capacitor 104B may further shift the AW 80A to 80Ganti-resonate or resonate frequency to tune to a second band orsub-band. As shown in FIG. 3A, the module 120A includes the capacitor104A, the second capacitor 104B and a resistor 106A parallel to thefirst capacitor 104A, and a third capacitor 104C and a second resistor106B parallel to the first capacitor 104A (and second capacitor 104B andresistor 106A). The additional capacitor 104C may still further shiftthe AW 80A to 80G anti-resonate or resonate frequency to tune to a thirdband or sub-band when the modules 120A to 120D are employed in parallelor series with a AW 80A to 80G as shown in modules 96A to 96G.

FIG. 3D is a diagram of a tunable capacitance module according tovarious embodiments. As shown in FIG. 3D, the module 120D includes thecapacitor 104A, the second capacitor 104B and resistor 106A selectivelyparallel (via a switch 105A) to the first capacitor 104A, and a thirdcapacitor 104C and a second resistor 106B selectively parallel (via thesecond switch 105B) to the first capacitor 104A (and second capacitor104B and resistor 106A). The module 120D may shift the AW 80A to 80Hanti-resonate or resonate frequency to tune to a first, second, or thirdband or sub-band as a function of the switches 105B, 105A when coupledin parallel or series with the AW 80A to 80H as shown in modules 96A to96G. The module 120D may also shift an AW 80A to 80H anti-resonate orresonate frequency to account for temperature or manufacturing variants.

FIG. 3E is a diagram of a tunable capacitor module 600 according tovarious embodiments. The tunable capacitor module 600 includes aplurality of capacitor banks 602 each switchable in operation viacontrol lines 640, 642, and 644. In an embodiment each successivecapacitor bank has twice the capacitance of the previous bank 602 sothat each control line 640, 642, and 644 is a digit of a binary number.In an embodiment the capacitor banks are formed of CMOS FETs havingtheir source and drain coupled via a resistor R_(DS) to form capacitorsin parallel. Each gate of the CMOS FETs 606, 608, 610, 612, 614 iscoupled to the respective control lines 640, 642, 644. Accordingly atunable AW module 96A to 96G using the tunable capacitor 600 (in seriesor parallel) may have N²−1 (where N is the number of control lines)different tunable anti-resonance or resonate frequencies based on theN²−1 effective capacitances of the module 600. Further details ofdigitally tunable capacitors are recited in commonly assigned andco-pending application entitled “METHOD AND APPARATUS FOR USE INDIGITALLY TUNING A CAPACITOR IN AN INTEGRATED CIRCUIT DEVICE”, FiledMar. 2, 2009, and International Application Number PCT/US2009/001358which is hereby incorporate by reference.

FIG. 4 is a block diagram of a configuration for a tunable filter module130 including tunable resonators according to various embodiments. Thefilter module 130 may have a common circuit board or module 132, aresonance or AW board or module 150, and electrical component board ormodule 140. The AW module 150 may include two or more resonators or AW80A, 80B, 80C, 80I. In an embodiment the AW 80A, 80B, 80C may form theT-configuration 90A shown in FIG. 2A. The AW module 150 may furtherinclude a bias AW 80I.

The electrical component board or module 140 may include three tunablecapacitors 98A, 98B, 98C, a control logic module 146, and an oscillator144. Each tunable capacitor 98A, 98B, 98C may be coupled in parallel toan AW 80A, 80B, 80C, respectively via two conductance lines 134 betweenthe modules 140, 150. Accordingly, the combination of an AW 80A and atunable capacitor 98A may form a tunable AW module 96A as shown in FIG.2B. The oscillator 144 may be coupled to the bias AW 80I via aconductance line 134. The effective resonate frequency of the bias AW80I may modulate the oscillation of the oscillator 144 in a known andmeasurable way.

The control logic module 146 may receive control signals SPI forcontrolling the capacitance of tunable capacitors 98A, 98B, and 98C anda stable clock or reference frequency (such a phase lock loop signal).In an embodiment the AW 80I resonate or anti-resonate frequencies mayvary as function of temperature. Similarly the oscillator 144 frequencymay vary as the AW 80I resonate or anti-resonate frequencies fluctuatewith temperature. The control logic 146 may monitor the change ofoscillator frequency 144 via the stable reference frequency signal. Thecontrol logic 146 may then modulate the tunable capacitor's capacitancebased on known deltas to account for the oscillator frequency andthereby corresponding AW 80A, 80B, 80C resonate or anti-resonatefrequencies. In an embodiment the delta may be added to the SPI controlsignals as needed to adjust for temperature effects of the AW 80A, 80B,80C.

FIG. 5A is a block diagram of an electrical signal filter module 190Aincluding switchable resonator modules (SRM) according to variousembodiments. The module 190A includes three switchable resonatorsmodules (SRM) 180A, 180B, and 180C, resistors 94A, 94B, and a signalgenerator 92A. In an embodiment the signal generator 92A may represent aTX signal to be communicated via an antenna 50, the resistor 94A mayrepresent the load of the TX signal, and the resistor 94B may representthe load of an antenna 50. In an embodiment the switchable resonatorsmodules (SRM) 180A, 180B, 180C may form a T-shape between the signal tobe transmitted and the antenna (source load 94A and antenna load 94B).The switchable resonators modules (SRM) 180A, 180B, 180C may include oneor more resonator devices or modules where one or more of the modulesmay include switchable resonators. The one or more resonators may have afixed resonate frequency and anti-resonate frequency similar to a passband and stop band of a common inductor-capacitor type filter.

FIG. 5B to 5D are block diagrams of SRM 184A to 184C according tovarious embodiments. As shown in FIGS. 5B to 5D, a resonator module184A, 184B, 184C may include several (acoustic wave) resonators 82A to82N where the resonators 82A to 82N may be bypassed or activated via oneor more switches 182A to 182N.

In FIG. 5B a switchable resonator module (SRM) 184A may include tworesonators 82A, 82B, and two switches 182A, 182B. The resonators 82A,82B are coupled in series. A switch 182A, 182B may be coupled inparallel to resonator 82A, 82B, respectively. When a switch 182A, 182Bis closed, the corresponding resonator 82A, 82B may be bypassed andinoperative. When a switch 182A, 182B is open, the correspondingresonator 82A, 82B may be active. In an embodiment each switch 182A,182B may be controlled by a control signal S1A, S1B. In an embodiment,resonator 82A and 82B may operate exclusively or in tandem as a functionof the control signals S1A, S1B. In a further embodiment a single signalmay control the switches 182A, 182B where in a first signal state switch182A is open and switch 182B is closed and in a second signal stateswitch 182A is closed and switch 182B is open.

In FIG. 5C the switchable resonator module (SRM) 184B includes threeresonators 82A, 82B, 82C and three switches 182A, 182B, and 182C. Theresonators 82A, 82B, 82C are coupled in series. A switch 182A, 182B,182C may be coupled in parallel to a resonator 82A, 82B, 82C,respectively. When a switch 182A, 182B, 182C is closed the correspondingresonator 82A, 82B, 82C may be bypassed and inoperative. Conversely whena switch 182A, 182B, 182C is open, the corresponding resonator 82A, 82B,82C may be active. Each switch 182A, 182B, 182C may be controlled by anindependent control signal S1A, S1B, S1C. In an embodiment, resonators82A, 82B, and 82C may operate exclusively or in various combinations asa function of the control signals S1A, S1B, S1C.

In FIG. 5D the switchable resonator module (SRM) 184C includes aplurality of resonators 82A to 82N and corresponding switches 182A to182N. The resonators 82A to 82N may be coupled in series. A switch 182Ato 182N may be coupled in parallel to each resonator 82A to 82N,respectively. When a switch 182A to 182N is closed the correspondingresonator 82A to 82N may be bypassed and inoperative. Similarly, when aswitch 182A to 182N is open the corresponding resonator 82A to 82N maybe active. Each switch 182A to 182N may be controlled by a controlsignal S1A to S1N. In an embodiment, the resonators 82A, 82B, and 82Cmay operate exclusively or in various combinations as a function of thecontrol signals S1A to S1N.

FIG. 5E is a block diagram of a modulated or tunable resonator modulesystem 190B according to various embodiments. The tunable resonatormodule system 190B includes several tunable resonator modules 196A,196B, 196C, forming a T configuration similar to FIG. 5A. Each tunableresonator module 196A, 196B, 196C may include a variable capacitor 98A,98B, 98C coupled in parallel with a SRM 184D, 184E, 184F. In eachtunable modulator 196A, 196B, 196C, the variable capacitor 98A, 98B, 98Cmay modulate the anti-resonant frequency w_(a) of corresponding activeresonators 82A to 82N, 83A to 83N, and 84A to 84N based on thecapacitor's selected capacitance C_(v) (effective capacitance C_(e) ofan AW device may be equal to Co+C_(v) for a module 196A). In anembodiment the variable capacitor 98A, 98B, 98C may module theanti-resonate w_(a) for each resonator 82A to 82N, 83A to 83N, and 84Ato 84N not bypassed by switches 182A to 182N, 183A to 183B, and 185A to185N where the switches are controlled by switch control signals S1A toS1N, S2A to S2N, and S3A to S3N.

In an embodiment each resonator 82A to 82N, 83A to 83N, and 84A to 84Nmay have a different resonance in each respective SRM 184D, 184E, and184F. The different resonances of the SRM 184D, 184E, and 184F mayenable a system 190B to tune to different channels (different resonancefrequencies) as shown in FIGS. 6A to 6F for frequency responses 197A to197F. In an embodiment the variable capacitor 98A and 98B in parallelwith the SRM 184D, 184E may only module or tune the anti-resonate w_(a)of the active resonators 82A to 82N, 83A to 83N respectively. Byselectively bypassing resonators 82A to 82N and 83A to 83N in the SRM184D, 184E, the resonate frequency or effective pass-bands of the system190B may be tuned in addition to the stop bands.

In an embodiment control signals S×N in each corresponding SRM 184D,184E, 184F may be similarly opened or closed, e.g., control signals182A, 183A, and 185A may be simultaneously opened or closed (coordinatedbetween modules 184D, 184E, 184F). In a further embodiment the only oneswitch 182A to 182N, 183A to 183N, 185A, to 185N may be open at any timeso only one resonator 82A to 82N, 83A to 83N, 84A, to 84N is active atany time. In an embodiment the variable capacitor 98C in parallel withthe SRM 184F may only module or tune the resonate w_(r) of the activeresonators 82A to 82N, 83A to 83N respectively. By selectively bypassingresonators 84A to 84N, the anti-resonate frequency or effectivepass-bands of the SRM 196C may be tuned in addition to the stop bands.

FIG. 5F is similar to FIG. 5E except the tunable module 196C is replacedby the module 96G described with respect to FIGS. 2E and 2I. The module96G may include a variable capacitor 98G in parallel with an AW 80G anda variable capacitor 98H in series with the AW 80G. Accordingly, theanti-resonate w_(a) of 96G may be modulated by the variable capacitor98G having a capacitance C_(v1) and the variable capacitor 98H having acapacitance C_(v2). Similarly, the resonate w_(r) may be modulated bythe variable capacitor 98H having the capacitance C_(v2). Capacitor 98Hmay be subject to high voltages.

FIG. 5G is a block diagram of a modulated filter system 190C similar toFIG. 2D where the tunable resonators 96A, 96B, 96C may be further tunedby series coupled variable capacitors 98I, 98J, 98H. The variablecapacitors 98I and 98J may modulate or tune the resonate frequencies ofthe resonators 80A, 80B, respectively. Such modulation may enable thesystem 190C to tune different pass-bands and stop-bands as a function ofthe tunable capacitors 98A, 98B, 98C, 98I, 98J, and 98H. The tunablecapacitors 98I, 98J in series with the resonators 80A, 80B may besubject to significant voltages, requiring the capacitors to be large.It is noted any resonator 80A to 80H shown in FIG. 2A to 2H may bereplaced by a SRM 184A, 184B, or 184C such as shown in FIG. 5B to 5D.

In an embodiment it may be desirable to increase the isolation andstop-band rejection of a filter module. FIG. 7A is a block diagram of afilter module 202A according to various embodiments. The filter module202A includes an inductor 204A and capacitor 206A in series coupled inparallel to another inductor 204B and capacitor 206B in series. Theinductors 204A, 204B may have an inductance L₁, L₂ and the capacitors206A, 206B may have a capacitance C₁, C₂. The filter module 202A mayhave two pass bands at w₁ and w₂ surrounding a rejection point at w_(t).The rejection point may be limited by the quality, Q of the filtermodule 202A. In the filter module 202A the pass bands may be determinedby the equations:

$w_{1} \equiv {\frac{1}{\sqrt{L_{1}C_{1}}}\mspace{14mu}{and}\mspace{14mu} w_{2}} \equiv {\frac{1}{\sqrt{L_{2}C_{2}}}.}$The impedance of the filter module 202A may be determined by theequation

${{z_{t}(s)} = {\frac{L_{t}}{s} \times 2\frac{\left( {s^{2} - s_{1}^{2}} \right)\left( {s_{2} - s_{2}^{2}} \right)}{s^{2} - s_{t}^{2}}}}\mspace{14mu}$${{{where}\mspace{14mu} s_{1}} = {j\; w_{1}}},{s_{2} = {j\; w_{2}}},{s_{t}^{2} = \left( \frac{{L_{1}s_{1}^{2}} + {L_{2}s_{2}^{2}}}{L_{1} + L_{2}} \right)},{{{and}\mspace{14mu} L_{t}} = {\frac{L_{1} \circ L_{2}}{L_{1} + L_{2}}.}}$

As noted with reference to FIG. 2B, an AW 80A may include an inductor86A in series with a capacitor 82B with an inductance Lm and capacitanceCm, respectively. The resistor 84A and capacitor 82A may be nominal as afunction of the inductor 86A and capacitor 82B. Accordingly, in anembodiment the filter module 202A may be represented by the parallelcoupling of an AW 214A, 214B (the filter module 212A shown FIG. 7B). Inthis embodiment the acoustic wave module 214A may represent the inductor204A and capacitor 206A and the AW module 214B may represent theinductor 204B and capacitor 206B of filter module 202A.

The elasticity and inertia of an AW 214A, 214B may be configured orselected to have an equivalent Lm about L₁ or L₂ and Cm about C₁ and C₂in an embodiment. In AW 214A, 214B, the parallel capacitance Co mayrepresent the effective capacitance of the transverse electric fingersin the piezoelectric material and the resistance Rm may represent theheat generated by mechanical motion in the AW 214A, 214B (the effectivequality or Q limiter of the AW). As a function of the signals to befiltered the pass bands and effective stop band between the pass bandsw₁ and w₂ may need to be shifted or changed.

In an embodiment two or more inductor-capacitor filter modules (LCF)202A, 202B, in series with a low resistive switch 205A, 205B may becoupled in parallel as shown FIG. 8A, filter module 208A. The switch205A may include one or more CMOS or MOSFET devices that have a lowresistance when closed (as a function of a control signal S1A, S1B). Inan embodiment the LCF 202A may have a first desired pass-band andstop-band and the LCF 202B may have a second desired pass-band andstop-band. Via the control signals S1A, S2A a signal may be processed byeither the LCF 202A or the LCF 202B of the filter module 208A. Becausethe modules 202A, 202B are placed in parallel the operative signal pathwill only include the resistance of a single switch 205A, 205B, thusincreasing the quality of the filter module 202A, 202B and its effectiverejection strength (of its stop-band).

In an embodiment it may be desirable to process signals with largervoltage or limit circuit elements. The LCF 202A, 202B of filter module208A may be replaced by acoustic wave filters (AWF) 212A, 212B as shownin FIG. 8B, filter module 222. Each AWF 212A, 212B may include two ormore AW modules 214A, 214B coupled in parallel as shown in FIG. 7B. Asnoted a variable capacitor 218A may be coupled in parallel in with AWdevice(s) or module(s) to provide adjustments for process variations inthe AW device(s) or module(s) variations due to temperature, and enableshifting of pass-band or stop-bands of the device(s). As shown in thefilter module 224 of FIG. 8C, a variable capacitor 218A may also beplaced in parallel with one or more AWF 212A, 212B. In filter module224, the capacitor 218A capacitance may be varied as a function of theswitch 216A, 216B control signals S1A, S1B to modulate the AWF 212A orthe AWF 212B.

FIG. 9B is a block diagram of filter module 230A according to variousembodiments. The filter module 230A may include a firstcapacitive-tunable, parallel switched AW module filter 232A, a secondcapacitive-tunable, parallel switched AW module filter 232B, a firstcapacitive-tunable parallel switched AWF module filter 224A, acapacitive-tunable AW module 234A, and impedance inversion modules 228A,228B. The module 232A may be coupled to the module 232B via theinversion module 228A and the module 232B may be coupled to the module224A via the inversion module 228B. The module 234A may be coupled toground and the module 232A.

In an embodiment the first capacitive-tunable, parallel switched AWmodule filter 232A may include AW modules 214A, 214B, switches 216A,216B, and variable capacitor 218A. AW module 214A is series coupled toswitch 216A and AW module 214B is series coupled to switch 216B. Eachmodule, switch pair 214A, 216A, 214B, 216B is coupled in parallel to thevariable capacitor 218A. Similarly, the second capacitive-tunable,parallel switched AW module filter 232B may include AW modules 214C,214D, switches 216C, 216C, and a variable capacitor 218B. AW module 214Cis series coupled to switch 216C and AW module 214D is series coupled toswitch 216D. Each module, switch pair 214C, 216C, 214D, 216D is coupledin parallel to the variable capacitor 218B.

The capacitive-tunable, parallel switched AWF module filter 224A mayinclude AWF modules 212A, 212B, switches 216E, 216F, and variablecapacitor 218C. AWF module 212A is series coupled to switch 216E and AWFmodule 212B is series coupled to switch 216F. Each module, switch pair212A, 216E, 212B, 216F is coupled in parallel to the variable capacitor218C. Each AWF module 212A, 212B includes two parallel coupled AWmodules 214C, 214D and 214E, 214F, respectively. The capacitive-tunableAW module 234A includes an AW module 214G coupled in parallel to avariable capacitor 218D.

In an embodiment the inversion module 228A, 228B may be a K-filter 228as shown in FIG. 9A. The filter 228 includes two capacitors 226A, 226Bin series with a third capacitor 226C in parallel and between the seriespair 226A, 226B. In an embodiment the capacitors 226A, 226B have acapacitance of −C and the capacitor 226C has a capacitance of +C. Asshown in the FIG. 9B, the capacitor 226C of the inversion modules 228A,228B is also coupled to ground.

In an embodiment the module 234A may provide a fixed high rejection andtunable pass-band, the modules 232A, 232B may provide a movable,switchable pass-band and tunable rejection band, and the module 224A mayprovide a movable, switchable high rejection point and pass-band. Thefilter module 230A of FIG. 9B may be employed to generate the frequencyresponses 240A, 240B shown in FIGS. 10A, 10B where the control signalsS1A, SIC, S1E may be active, inactive while the control signals S1B,S1D, S1F may be inactive, active, respectively to shift the pass-bandsand stop or rejection bands shown in FIGS. 10A, 10B (240A, 240B). In anembodiment 230B shown in FIG. 9C the inversion modules 228A, 228B ofFIG. 9B may be replaced by one or more capacitors 226D, 226E coupled toground.

FIG. 11 is a diagram of filter frequency responses 250 according tovarious embodiments. FIG. 11 depicts a first frequency response 258B anda second frequency response 258A. In an embodiment a filter response258A, 258B includes a passband 261 with a passband edge 262 and stopband263. Further a filter response 258A, 258B may have a maximum acceptableloss 252 in the passband area 261 (creating the passband edge 262) and aminimum attenuation or rejection 256 in the stopband 263. Further theminimum attenuation or rejection 256 in the stopband 263 may need to beachieved by a particular frequency 254 such a channel boundary or cutofffrequency. In an embodiment a filter mechanism or module such asresonator module 292B of FIG. 13B may produce a first frequency response258B during ideal operation and fabrication conditions. The same filtermodule 292B may generate the shifted frequency response 258A due tonon-ideal operation or fabrication conditions. In an embodiment thefrequency response shift from 258B to 258A may be due to temperaturefluctuations and fabrication variations.

Given the potential filter module 292B frequency response shift (from258B to 258A), the passband 261 region or width of a signal processed bythe filter module 292B may be narrowed or reduced to ensure that theminimum required attenuation 256 is achieved by a required frequency254. The required frequency 254 may be the start of another channel andthe filter module 292B may be required to prevent signal leakage intoadjacent channels. The distance between the channel boundary 254 andpassband edge 262 is commonly termed the guard band of a filter orchannel. In a system or architecture such as channel architecture 310A,310B, 310C shown in FIG. 15A, 15B, 15C the guard band (316B in FIGS. 15Band 318B in FIG. 15C) represents lost or unusable bandwidth. Accordinglyit may be desirable to minimize the guard band 316B, 318B by reducingthe effect of temperature and process or fabrication variations offilters or filter architectures that may be employed to limit or preventsignal leakage between adjacent channels (312A, 314A, and 312B).

FIG. 12 is a flow diagram of a filter configuration method 270 accordingto various embodiments. In the method 270 the maximum passband loss 252may be selected where this loss level may be required or indicated (by astandard or other communication protocol establishment organization)(activity 272). The filter response stopband minimum attenuation 256needed to reduce or limit signal leakage into adjacent channels may beselected where the minimum attenuation may be required or indicated (bya standard or other communication protocol establishment organization)(activity 274). Further the minimum stopband edge 254 for the minimumattenuation 256 may also be selected where the minimum stopband edge 254may be required or indicated (by a standard or other communicationprotocol establishment organization) (activity 276).

In the method 270 the minimum stopband edge 254 of a non-tunable filter292B may be pre-shifted to ensure the filter response 258B when shifteddue to temperature or process variations achieves the minimumattenuation 256 by the desired or required boundary or edge 254(activity 278). Further, the filter passband 262 edge may also beshifted, effectively reducing the usable signal bandwidth to ensure lessthan the maximum loss 252 is present in the passband (activity 282).Accordingly the effective guard band 316B, 318B may be increased.

FIG. 13A is a simplified block diagram of a filtering architecture 290Aaccording to various embodiments. The filter architecture includes afilter 292A coupled in series with a tunable filter 294A. In anembodiment the filter 292A may have a desired frequency response shownas 258A shown in FIG. 11 but be subject to temperature or processvariations where the fixed filter 292A frequency response may shift tothe filter response 300A shown in FIG. 14A. Such a worst case frequencyresponse 302A may be unacceptable due to potential signal leakage beyondthe desired channel or signal boundary 254. The frequency response 302Aotherwise has stable passband and stopband 304A.

The tunable filter 294A may have a tunable frequency response such asmodule 294B shown in FIG. 13B where temperature and process variationsare corrected or modulated by an adjustable element such as a tunablecapacitor 218A. The tunable filter 294A may have a frequency response300B in FIG. 14B. As shown in FIG. 14B the frequency response 302B mayachieve the desired or required maximum passband loss 252 with an edge262 than is greater in frequency than the filter 302A (when adjusted toaccount for potential shifts) and correspondingly a smaller needed guardband 316B, 318B. The filter response 302B for tunable filter 294A mayalso meet the minimum attenuation 256 by the frequency boundary 254(point 303B in FIG. 14B). The tunable filter 294A filter response 302Bmay have a second, unacceptable passband 304B within the adjacentchannel 305 and thus be unacceptable as a single filter.

In an embodiment the filter module 292A, 292B and tunable filter 294A,294B, 290A, 290B respectively, in combination may create the frequencyresponse 300C shown in FIG. 14C. As shown in FIG. 14C the net frequencyresponse 300C may include the desirable stopband of filter 294A, Bwithout the subsequent passband 304B due the filter 292A, B stopband304A. Further, while the filter 292A, B stopband edge 303A may vary withtemperature and process variations it is sufficient to suppress thefilter 294A, B undesirable second passband 304B. The resultant frequencyresponse 300C may have an acceptable passband loss 252 and minimumstopband attenuation 256 by the desired boundary or frequency cutoff 254without temperature and process variations.

FIG. 13B is a block diagram of a filter architecture 290B including amodulated or tunable resonator module 294B and a resonator module 292Baccording to various embodiments. The resonator module 292B may be anon-tunable filter that may be configured to a frequency responsesimilar to frequency response 300A shown in FIG. 14A. The resonatormodule 292B may include surface acoustic wave (SAW) and bulk acousticwave (BAW) devices where the device enables the transduction of acousticwaves. In an acoustic wave device electrical energy is transduced tomechanical energy back to electrical energy via piezoelectric materials.The piezoelectric materials may include quartz, lithium niobate, lithiumtantalate, and lanthanum gallium silicate. One or more transversefingers of conductive elements may be placed in the piezoelectricmaterials to convert electrical energy to mechanical energy and back toelectrical energy.

In an embodiment the tunable resonator 294B may include one or moreacoustic wave modules or devices 214A, 214B, and a tunable capacitor218A. The AW modules 214A, 214B, and tunable capacitor 218A may becoupled in parallel in an embodiment as shown in FIG. 13B. As noted thisconfiguration may have two pass bands at w₁ and w₂ surrounding arejection point at w_(t). The pass bands at w₁ and w₂ may correspond tofilter response components 302B and 304B shown in FIG. 14B and therejection point at w_(t) may correspond to the component 303B. Thevariable capacitor 218A coupled in parallel with the AW modules 214A,214B may tune or modulate the filter module 294B frequency response 300Bto correct for temperature or process variations. Other resonatorfilters such as shown in FIGS. 2A to 2H, FIG. 4, FIGS. 5A to 5G, FIGS.7B to 8C, and FIGS. 9B-9C may be employed in whole or part as a tunableresonator or filter 294B.

The filter architecture 290A may be modified such as shown in FIGS. 16A,16B, 16C, and 16D for different filter requirements or parameters. Asshown in FIG. 16A, the filter architecture 330A may include a switchableand tunable filter module 334A. Such a module 334A and resultingarchitecture (and switchable frequency response) may be employed incommunication architectures requiring varying filters to process one ormore signals. As shown in FIG. 16B, a switchable, tunable filteringarchitecture 330B may include a first switchable tunable filter module335A and a second switchable tunable filter module 335B. Each module335A, 335B may include a filter module 332B, 332C similar to module 292B(FIG. 13B). Each switchable, tunable module 335A, 335B may also includea AWF 212A, AWF 212B, switch pairs 216E, 217E and 216F, 217F, and a AWF96C, 96F.

Each AWF module 212A, 212B may include two AW modules 214C, 2124D, and214E, 214F coupled in parallel and a variable capacitor 218C, 218Dfurther coupled in parallel to the two AW modules 214C, 214D and 214E,214F, respectively. The tunable modules 335A, 335B may include the AWFmodule 96C located between the AW 332B, 332C and 212A, 212B and ground.Each AWF 96C, 96D may include an AW module 80C, 80F and a tunablecapacitor 98C, 98F coupled in parallel to the AW module 80C, 80F. Eachswitchable, tunable module 335A, 335B may be coupled in parallel. Asnoted above each AWF module 212A, 212B may have a frequency responsethat includes two pass bands at w₁ and w₂ surrounding a rejection pointat w_(t). In an embodiment the switchable, tunable architecture 330B mayoperate in two modes: mode 1 (switch pair 216E, 217E closed and switchpair 216F, 217F open) (frequency responses 320A and 320B shown in FIGS.17A and 17B may combine to create response 320C shown in 17C) and mode 2(switch pair 216E, 217E open and switch pair 216F, 217F closed),frequency response 320D and 320E shown in FIGS. 17D and 17E may combineto create response 320F shown in 17F.

The AW module 332B, 332C may have a frequency response 320A, 320D shownin FIG. 17A, FIG. 17D, respectively. When this frequency response 320A,320D is combined with the switchable, tunable AW module's 335A frequencyresponse mode 1 320B—FIG. 17B or tunable AW module's 335B, mode 2320D—FIG. 17E, the resultant frequency response may be combined mode 1320C—FIG. 17C or mode 2 320F—FIG. 17F. Such a switchable, tunable filterarchitecture 330A, 330B may be applied in a channel architecturerequiring different filter operation modes such as shown in FIGS. 15A to15C. The AWF 96C, 96F may provide an additional stop band as a functionof the AW 80C, 80F configuration.

In the channel configuration 310A shown in FIG. 15A a time divisionmultiplex (TDD) band 38 is located between a transmit channel of band 7and a receive channel of band 7. In an embodiment band 7 may befrequency division duplex (FDD) spectrum of a long term evolution (LTE)system and band 38 may be TDD spectrum of the LTE system orarchitecture. In the combined LTE FDD, TDD spectrum band 38 spectrum314A may be sandwiched between band 7's spectrum 312A 312B. When the TDDchannel or band 38 is transmitting (as shown in configuration 310B shownin FIG. 15B) band 38 should not leak into RX band 7 312B. In band 38transmit mode 310B, mode 1 of the filter architecture 330B may beemployed to generate the frequency response 320C shown in FIG. 17C.

In channel configuration 310B during band 38 transmit mode, a guard band316B may be located between band 38's transmit section or passband 316Aand band 7's receive band 312B. In mode 1 the filter architecture 330Bmay generate the frequency response 320C shown in FIG. 17C where thestopband 324A is located in the guard band 316B. When band 38 receivemode (FIG. 15C, 310C), the band 7 transmit channel 312A may interferewith the band 38 receive channel 318A. In such a configuration thefilter architecture 330B of FIG. 16B may operate in the second mode(mode 2) to generate the frequency response 320F shown in FIG. 17F. Thefrequency response 320F stopband 324B may be located in the guard band318B when band 38 is in receive mode. The architecture 330B shown inFIG. 16B may reduce the guard band size 316B, 318B enabling greaterbandwidth utilization (of band 38 in the embodiment shown in FIGS. 15Ato 15C).

Another filter embodiment 330C is shown in FIG. 16C. Filter 330Cincludes a first, tunable switchable filter module 334C and a second,tunable switchable filter module 334D serially coupled. The first,tunable switchable filter module 334C may include a first resonator332B, a first tunable resonator 212A, a first, grounded tunableresonator 96C, and a first opposite switch pair 216E, 217E. The switch217E, the first resonator 332B, and the first tunable resonator 212A maybe serially coupled together and the serial group (217E, 332B, 212A) maybe coupled in parallel to the switch 216E. The AWF module 96C may belocated between the AW 332B and 212A and ground. The AWF 96C may includean AW module 80C and a tunable capacitor 98C coupled in parallel to theAW module 80C.

Similarly, the second, tunable switchable filter module 334D may includea second resonator 332C, a second tunable resonator 212B, a second,grounded tunable resonator 96F, and a second opposite switch pair 216F,217F. The switch 217F, the second resonator 332C, and the second tunableresonator 212B may be serially coupled together and the serial group(217F, 332C, 212B) may be coupled in parallel to the switch 216F. TheAWF module 96F may be located between the AW 332C and 212B and ground.The AWF 96F may include an AW module 80F and a tunable capacitor 98Fcoupled in parallel to the AW module 80F.

The filter module 334C, when active (switch 216E open, switch 217Eclosed, switch 216F closed, switch 217F open (mode 1)) may produce thefrequency response 320C shown in FIG. 17C. The filter module 334D, whenactive (switch 216E closed, switch 217E open, switch 216F open, switch217F closed (mode 2)) may produce the frequency response 320F shown inFIG. 17F. In another mode, mode 3 switches 216E and 216F may both beopen and switches 217E, 217F closed (engaging both filter modules 334C,334D) generating the frequency response 320G shown in FIG. 17G. Such afrequency response may be employed to protect bands on either side ofthe combined filter, such as band 7 transmit 312A and receive 312B shownin FIG. 15A. The AWF 96C may provide an additional stop band as afunction of the AW 80C configuration.

The filter system or architecture 330C may have an unacceptableinsertion loss in mode 1 or 2 given the potential loss and capacitanceof the open switches 216F, 217E (mode 2), switch 216E, 217F (mode 1).Another filter architecture 330D enabling modes 1, 2, and 3 with a lowerinsertion loss is show in FIG. 16D. As shown in FIG. 16D, the filterarchitecture 334E includes a first filter module 336A, a second filtermodule 336B, and a third filter module 336C, all coupled in parallel toeach other. The first filter module 336A includes a first resonator332B, a first AWF 212A, a first, grounded AWF 96C, and a switch pair216E, 217E coupled in series where these resonators in series mayproduce the frequency response 320C shown in FIG. 17C (mode 1—switchpair 216E, 217E closed, switch pair 216F, 217F open, and switch pair216G, 217G open).

The second filter module 336B includes a second resonator 332C, a secondAWF 212B, a second, grounded AWF 96F, and a switch pair 216F, 217Fcoupled in series where these resonators in series may produce thefrequency response 320F shown in FIG. 17F (mode 2—switch pair 216E, 217Eopen, switch pair 216F, 217F closed, and switch pair 216G, 217G open)).The third filter module 336C may include the first resonator 332B, thefirst AWF 212A, the second resonator 332C, the second AWF 212B, thefirst, grounded AWF 96C, the second, grounded AWF 96F, and the switchpair 216G, 217G in series. In mode 3, the combined resonators 332B,212A, 332C, and 212B may generate the frequency response 320G shown inFIG. 17G.

A signal processing architecture 330E is shown in FIG. 16E. Thearchitecture 330E may include a first filter system 215A, a secondfilter system 215B, a two position switch 216H, a power amplifier (PA)12, a low noise amplifier (LNA) 14, an antenna 50, and a mixer 60A. Asignal 8 to be transmitted via antenna 50 may be amplified by PA 12 toproduce an amplified signal 22. The resultant amplified signal 22 mayinclude signal content beyond the desired or permitted transmissionbandwidth such as band 38 transmit channel 316A shown in FIG. 15B. Theresultant signal 22 may filtered by the filter system 215A. The filtersystem 215A may include the first resonator module 332B, a firstgrounded resonator module 96C (including a resonator 80C and a tunablecapacitor 98C), and a first parallel resonator module (includingresonator 214C, 214D and a tunable capacitor 218C). In an embodiment thefirst filter system 215A may generate the frequency response 320C shownin FIG. 17C.

The filtered, amplified signal may be coupled to the antenna 50 via theswitch 21611. Similarly a signal 42 received on the antenna 50 may befiltered by the second filter system 215B. The filter system 215B mayinclude the second resonator module 332C, a second grounded resonatormodule 96F (including a resonator 80F and a tunable capacitor 98F) and asecond parallel resonator module (including resonator 214E, 214F and atunable capacitor 218D). In an embodiment the second filter system 215Bmay generate the frequency response 320F shown in FIG. 17F. Theresultant filtered, received signal may be amplified by the LNA 14. Theamplified, filtered, received signal may be shifted to another centerfrequency (such as base-band) via the mixer 60A and a referencefrequency signal 60B to generate the frequency shifted, amplified,filtered, received signal 60C. The filter architecture 330E may beemployed in a TDD communication system such as band 38 in an LTEspectrum in an embodiment.

In an embodiment the method 340 shown in FIG. 18 may be employedconfigure a filter architecture 290A, 290B, 330A-E shown in FIGS. 13A,13B, and 16A-16E, respectively. In method 340 the maximum insertion loss(passband maximum loss) 252 may be selected (as required or indicated)(activity 342). The stopband minimum edge(s) 254 may then be selected(as required or indicated) (activity 344). Similarly the minimalattenuation for the stopband edge may also be selected (as required orindicated) 256 (activity 346). Based on these requirements 252,254, 256,a tunable resonator filter 294A, 294B, 334A, 334B may be configured tohave a stopband located at the point 254 and having at least the minimumattenuation 256 while meeting the maximum passband loss 252 requirement(activity 348). A resonator filter 292A, 292B, 332A, 332B, 332C may beconfigured to have stopband extend pass the initial stopband 254 withthe minimum attenuation 256 and the maximum passband loss 252 based onthe potential temperature and process variation of the filter (activity352). Activities 348, 352 may be performed in any order orcontemporaneously.

FIG. 19A is a block diagram of an electrical signal filter module 360Aincluding resonators 80A, 80B, 80C and diagrams of filter frequencyresponses 362A, 362B, 362C of resonators 80A, 80B, 80C, respectivelyaccording to various embodiments. A resonator 80A, 80B, 80C may berepresented by corresponding electrical components according to variousembodiments such as shown in FIGS. 2B, 20A, 20B. As shown in FIG. 2B,20A, 20B, a resonator 80A, 80B, 80C may be represented by a firstcapacitor 81A, 81B, 81C in parallel with a series coupling of aninductor 86A, 86B, 86C, second capacitor 82A, 82B, 82C, and resistor84A, 84B, 84C where the capacitors 81A, 81B, 81C, 82A, 82B, 82C may havea capacitance of C_(OA), C_(OB), C_(OC), C_(MA), C_(MB), C_(MC),respectively, inductors 86A, 86B, 86C may have an inductance of L_(MA),L_(MB), L_(MC) and the resistors 84A, 84B, 84C may have a resistance ofR_(MA), R_(MB), R_(MC) in an embodiment.

The values of C_(MA), C_(MB), C_(MC) and L_(MA), L_(MB), L_(MC) may berelated to the elasticity and inertia of an AW 80A, 80B, 80C in anembodiment. The values of C_(OA), C_(OB), C_(OC) may represent theeffective capacitance of the transverse electric fingers in thepiezoelectric material of the AW 80A, 80B, 80C in an embodiment. Thevalues of R_(MA), R_(MB), R_(MC) may represent the heat generated bymechanical motion in the AW 80A, 80B, 80C (the effective quality or Qlimiter of the AW) in an embodiment. Using the values C_(OA), C_(MA),L_(MA), and R_(MA) for the first capacitor 81A, the inductor 86A, thesecond capacitor 82B, and the resistor 84A for resonator 80A, theresonance w_(r) and the anti-resonance w_(a) of the acoustic wave (AW)device 80A may be defined by the following equations:

$\begin{matrix}{w_{r\; 1} \equiv {\frac{1}{\sqrt{L_{MA}C_{MA}}}\mspace{14mu}{and}\mspace{14mu} w_{a\; 1}} \equiv {\frac{1}{\sqrt{L_{MA}C_{MA}{C_{OA}/\left( {C_{MA} + C_{OA}} \right)}}}.}} & \;\end{matrix}$

Using these equations the AW 80A may form the frequency response 362Ashown in FIG. 19A, the response similar to a low pass filter with a passband about the resonate frequency, f_(r1) and stop band about theanti-resonance f_(a1). Similarly, the AW 80B may form the frequencyresponse 362B shown in FIG. 19A, the response similar to a low passfilter with a pass band about the resonate frequency, f_(r2) and stopband about the anti-resonance f_(a2). The AW 80C may form a short pathand its frequency response 362C shown in FIG. 19A may be similar to ahigh pass filter with a pass band about the anti-resonance f_(a3) andstop band about the resonate frequency, f_(r3). It is noted that theresonator AW 80A, 80B, 80C resonate and anti-resonate frequenciesf_(r1), f_(r2), f_(r3) and f_(a1), f_(a2), f_(a3) may be fixed as afunction of the physical characteristics of the AW devices 80A, 80B,80C. Using the resultant frequency response of an AW device 80A, 80B,80C based on its physical characteristics, various filter responses maybe formed by various combinations of the devices 80A, 80B, 80C.

FIG. 19B is a diagram of filter frequency responses 362A, 362B, 362C ofthe electrical signal filter module 360A including resonators 80A, 80B,80C of FIG. 19A in a first, pass-band filter configuration 364A having acenter frequency f_(c) according to various embodiments. FIG. 19D is adiagram of the effective combination of filter frequency responses 362A,362B, 362C of the electrical signal filter module 360A includingresonators 80A, 80B, 80C of FIG. 19A in the first, pass-band filterconfiguration 364C having a center frequency f_(c) according to variousembodiments.

In FIGS. 19B and 19D the AW device 80A frequency response 362A resonatefrequency, f_(r1) may be configured to be greater than f_(c) of thefilter 364A and accordingly its stop band about the anti-resonancef_(a1) also greater than f_(c) of the filter 364A and its resonatefrequency, f_(r1). Similarly, the AW device 80B frequency response 362Bresonate frequency, f_(r2) may be configured to be greater than f_(c) ofthe filter 364A and the AW device 80A frequency response 362A resonatefrequency, f_(r1). The AW device 80B stop band about its anti-resonancef_(a2) may also be greater than f_(c) of the filter 364A, its resonatefrequency, f_(r2) and the AW device 80A resonate frequency, f_(r1) andanti-resonate frequency, f_(a1). The short part AW device 80C frequencyresponse 362C anti-resonate frequency, f_(a3) may be configured to beless than f_(c) of the filter 364A and accordingly its stop band aboutthe resonance f_(r3) also less than f_(c) of the filter 364A and itsanti-resonate frequency, f_(a3). As shown in FIG. 19D the effectivecombination of the AW devices 80A, 80B, 80C having the frequencyresponses 362A, 362B, 362C as shown in FIG. 19B (based on the AW devicesphysical characteristics) may form the band pass filter 364C withbandwidth 366A.

FIG. 19C is a diagram of filter frequency responses 362A, 362B, 362C ofthe electrical signal filter module 360A including resonators 80A, 80B,80C of FIG. 19A in a notch filter configuration 364B having a centerfrequency f_(c) according to various embodiments. FIG. 19E is a diagramof the effective combination of filter frequency responses 362A, 362B,362C of the electrical signal filter module 360A including resonators80A, 80B, 80C of FIG. 19A in the notch filter configuration 364E havinga center frequency f_(c) according to various embodiments.

In FIGS. 19C and 19E the AW device 80A frequency response 362Aanti-resonate stop-band frequency, f_(a1) may be configured to be lessthan f_(c) of the filter 364A and accordingly its pass band about theresonance f_(r1) also less than f_(c) of the filter 364A and itsanti-resonate frequency, f_(a1). The AW device 80B frequency response362B anti-resonate frequency, f_(a2) may be configured to be about thecenter frequency, f_(c) of the filter 364B and greater than the AWdevice 80A frequency response 362A anti-resonate frequency, f_(a1). TheAW device 80B pass band about its resonance f_(r2) may also be less thanf_(c) of the filter 364B, its anti-resonate frequency, f_(a2) and the AWdevice 80A anti-resonate frequency, f_(a1). The AW device 80B pass bandabout its resonance f_(r2) may be greater the AW device 80A resonatefrequency, f_(r1).

The short part AW device 80C frequency response 362C stop-band resonatefrequency, f_(r3) may be configured to be greater than f_(c) of thefilter 364A and accordingly its pass-band about the anti-resonancef_(a3) also greater than f_(c) of the filter 364A and its resonatefrequency, f_(r3). As shown in FIG. 19E the effective combination of theAW devices 80A, 80B, 80C having the frequency responses 362A, 362B, 362Cas shown in FIG. 19C (based on the AW devices physical characteristics)may form the notch filter 364D with bandwidth 366B.

FIG. 21A is a block diagram of a tunable electrical signal filter module380A including resonators 80A, 80C, 80D, variable capacitors 98A, 98C,and 98D, and diagrams of filter frequency responses 362A, 362C, 362D ofresonators 80A, 80C, 80D, respectively according to various embodiments.In an embodiment, the variable capacitor 98A may be coupled in parallelto the AW device 80A. The variable capacitor 98C may be coupled inseries with the AW device 80C. The variable capacitor 98D may be coupledin series with the AW device 80D. The AW device 80C coupled in serieswith the variable capacitor 98C may form a first short path. The AWdevice 80D coupled in series with the variable capacitor 98D may form asecond short path.

Similar to FIG. 19A the AW 80A may form the frequency response 362Ashown in FIG. 21A, the response similar to a low pass filter with a passband about the resonate frequency, f_(r1) and stop band about theanti-resonance f_(a1). The AW 80C may form a short path and itsfrequency response 362C shown in FIG. 21A may be similar to a high passfilter with a pass band about its anti-resonance f_(a3) and a stop bandabout its resonate frequency, f_(r3). The AW 80D may also form a shortpath and its frequency response 362D shown in FIG. 21A may be similar toa high pass filter with a pass band about its anti-resonance f_(a4) anda stop band about its resonate frequency, f_(r4).

It is noted that the resonator AW devices 80A, 80C, 80D resonate andanti-resonate frequencies f_(r1), f_(r3), f_(r4) and f_(a1), f_(a3),f_(a4) may be fixed as a function of the physical characteristics of theAW devices 80A, 80C, 80D. The variable capacitors 98A, 98C, 98D mayshift the device 80A, 80C, 80D characteristics as described above. Usingthe resultant frequency response of a AW device 80A, 80C, 80D based itsphysical characteristics various filter responses may be formed byvarious combinations of the devices 80A, 80C, 80D.

FIG. 21B is a diagram of filter frequency responses 362A, 362C, 362D ofthe electrical signal filter module 380A (FIG. 21A) including resonators80A, 80C, 80D of FIG. 21A in a notch filter configuration 380B having acenter frequency f_(c) according to various embodiments. FIG. 21C is adiagram of the effective combination 380C of filter frequency responses362A, 362C, 362D of the electrical signal filter module 380A includingresonators 80A, 80C, 80D of FIG. 21A in the notch configuration 380Chaving a center frequency f_(c) and bandwidth 386C according to variousembodiments.

In FIGS. 21B and 21C the AW device 80A frequency response 362Aanti-resonate stop-band frequency, f_(a1) may be configured to be lessthan f_(c) of the filter 380B and accordingly its pass band about theresonance f_(r1) also less than f_(c) of the filter 380B and itsanti-resonate frequency, f_(a1). The short part AW device 80C frequencyresponse 362C stop-band resonate frequency, f_(r3) may be configured tobe about the f_(c) of the filter 380A and accordingly its pass-bandabout the anti-resonance f_(a3) greater than f_(c) of the filter 380Aand its resonate frequency, f_(r3). The second short part AW device 80Dfrequency response 362D stop-band resonate frequency, f_(r4) may beconfigured to be greater than the f_(c) of the filter 380A andaccordingly its pass-band about the anti-resonance f_(a3) greater thanf_(c) of the filter 380A and its resonate frequency, f_(r3). As shown inFIG. 21C the effective combination of the AW devices 80A, 80C, 80Dhaving the frequency responses 362A, 362C, 362D as shown in FIG. 21C(based on the AW devices physical characteristics) may form the notchfilter 380C with bandwidth 386C.

FIG. 20A is a block diagram of a tunable filter module 370A includingelectrical elements representing the characteristics of tunableresonators 80A, 80B, 80C according to various embodiments. As shown inFIG. 20A, the filter module 370A may include AW devices 80A, 80B, 80C,variable capacitors 98A, 98B, and 98C, a signal source or generator 92A,resistors 94A representing an input load, and a resistor 94Brepresenting an antenna load. The variable capacitor 98A may be coupledin parallel to the AW device 80A. The variable capacitor 98B may becoupled in parallel to the AW device 80B. The variable capacitor 98C maybe coupled in series with the AW device 80C.

As shown in 20A a resonator 80A, 80B, 80C may be represented by a firstcapacitor 81A, 81B, 81C in parallel with a series coupling of aninductor 86A, 86B, 86C, second capacitor 82A, 82B, 82C, and resistor84A, 84B, 84C where the capacitors 81A, 81B, 81C, 82A, 82B, 82C may havea capacitance of C_(OA), C_(OB), C_(OC), C_(MA), C_(MB), C_(MC),respectively, inductors 86A, 86B, 86C may have an inductance of L_(MA),L_(MB), L_(MC) and the resistors 84A, 84B, 84C may have a resistance ofR_(MA), R_(MB), R_(MC) in an embodiment. As noted the AW devices 80A,80B, 80C physical characteristics may be selected to create one orfilter modules (band-pass 364C of FIG. 19D and notch 364D of FIG. 19E).In order for the variable capacitors 98A, 98B, 98C to have a desiredtuning effect on the corresponding AW device 80A, 80B, 80C, theircapacitance range may need to be significant relative the effectiveinductance L_(MA), L_(MB), L_(MC) of the AW devices 80A, 80B, 80C.

A variable capacitor 98A, 98B, 98C may consume significant die area of asemiconductor including the capacitors and affect the Q (quality) of afilter 370A including the capacitors 98A, 98B, 98C. In an embodiment afilter 364D of FIG. 19E may have a center frequency of about 800 MHz.The AW 80A, 80B, 80C may be selected to have resonate frequenciesf_(r1), f_(r2), f_(r3) of about 797 MHz, 818 MHz, and 800 MHz,respectively. For such a filter the modeled AW devices 80A, 80B, 80Cinductance L_(MA), L_(MB), L_(MC) may be about 30 nH, 30 nH, and 132 nH,respectively. In order to effectively tune the AW devices 80A, 80B, 80C,the 98A, 98B, 98C capacitance range may need to be about 4-9.5 pF,3.5-13 pF, and 2-10 pF in an embodiment. In this example the Q of theresonators may be about 500 and the Q of the variable capacitors 98A,98B, and 98C may be about 100.

In an embodiment, the AW device 80A may be similar to the AW device 80B.In this embodiment the variable capacitor 98A may also be similar to thevariable capacitor 98B. As shown in FIG. 20B a single variable capacitor98D may be used to effectively tune both the AW device 80A and the AWdevice 80B. In the filter module 370B, the variable capacitor 98D iscoupled in parallel to the serial coupled AW devices 80A, 80. Using thefilter module 370B of FIG. 20B, the AW 80A, 80B, 80C may be selected tohave resonate frequencies f_(r1), f_(r2), f_(r3) of about 800 MHz, 805MHz, and 800 MHz, respectively. For such a filter the modeled AW devices80A, 80B, 80C inductance L_(MA), L_(MB), L_(MC) may be about 46 nH, 77nH, and 44 nH, respectively. In order to effectively tune the AW devices80A, 80B, 80C of filter 370B, the 98D and 98C capacitance range may needto be about 2-4 pF and 2.5-3.3 pF in an embodiment, a substantialreduction in capacitance relative to the capacitors 98A, 98B, 98C offilter module 370A of FIG. 20A. The filter module or configuration 370Bof FIG. 20B may lower the insertion loss of the filter and improved theQ of the filter module 370B. In an embodiment the AW devices 80A, 80B,and 80C may include 41 degree lithium niobate (LiNbO₃).

As noted above an acoustic wave (AW) device such as 80A, 80B, 80C shownin FIG. 4, resonate and anti-resonate frequencies f_(r0), f_(a0) mayvary due to manufacturing variants and operating temperature. Inaddition a variable capacitor such as device such as 98A, 98B, 98C shownin FIG. 4, selected or variable capacitance c_(x0) m (where x isvariable capacitance selection x) may vary due to manufacturing variantsand operating temperature. In an embodiment, a system such as 430 shownin FIG. 23 may adjust one or more variable capacitors tuning signals442A, 442B, 442C based on measured manufacturing variants for AW devices80A, 80B, 80C and variable capacitors 98A, 98B, 98C and the operatingtemperature of the system 430 near the AW modules 98A, 98B, 98C.

In an embodiment a temperature sensor module 444A electrically coupledto a contact 444B near the AW modules 98A, 98B, 98C may calculate thetemperature near the AW modules 98A, 98B, 98C. A control logic module446 may use the calculated temperature and known manufacturing variantsfor the system 430 components to control or modulate one or morevariable capacitors 98A, 98B, 98C via their control signals 442A, 442B,442C.

In an embodiment the AW modules 98A, 98B, 98C may be configured tooperate at a nominal operating temperature where the actualenvironmental temperature may be below or above the nominal operatingtemperature. The control logic module 446 may determine the differentialbetween the AW modules' 98A, 98B, 98C nominal operating temperature andthe calculated or determined environmental temperature. An AW modules'98A, 98B, 98C nominal operating temperature may be stored in the PROM448 (FIG. 23). Further a SPI signal may provide desired settings for thevariable capacitors 98A, 98B, 98C. The control logic module 446 mayadjust the SPI based settings for the variable capacitors 98A, 98B, 98Cbased on the calculated environmental temperature and knownmanufacturing variants for the system 430 components.

In an embodiment a programmable read only memory (PROM) 448 may includemanufacturing variance characteristics for one or more components 80A to80C and 98A to 98C of the system 430. The PROM 448 characteristics mayinclude the possible resonate and anti-resonate frequencies f_(r0),f_(a0) for each AW module 80A to 80C or a delta between the optimal ornormal resonate and anti-resonate frequencies f_(r0), f_(a0) and theprobable resonate and anti-resonate frequencies f_(r0), f_(a0) for eachAW module 80A to 80C. The control logic module 446 may use the delta ordifferential frequency or probable frequency for each AW module 80A to80C to calculate a desired correction to be achieved by modulating acorresponding variable capacitor 98A to 98C.

FIG. 22A is a diagram of a resonant frequency f_(r0) probably functionP_(r)(f) 392A representing manufacturing variations for an acoustic wave(AW) module according to various embodiments. FIG. 22B is a diagram ofan anti-resonant frequency f_(a0) probably function P_(a)(f) 392Brepresenting manufacturing variations for an acoustic wave (AW) moduleaccording to various embodiments. FIG. 22D is a diagram of a capacitanceper unit area c₀ probably function PA 392D representing manufacturingvariations for a capacitor module according to various embodiments. Inan embodiment the PROM 448 may include data representing each P_(r)(f)392A, P_(a)(f) 392B, P_(c)(f) 392C including the measured standarddeviation Δf_(r0), Δf_(a0), Δf_(c0) for each function 392A to 392C wherethe functions are approximately Gaussian in nature (as measured orsampled).

In an embodiment a programmable read only memory (PROM) 448 may alsoinclude temperature variance characteristics for one or more components80A to 80C of the system 430. The PROM 448 characteristics may includethe possible resonate and anti-resonate frequencies f_(r0), f_(a0) foreach AW module 80A to 80C or a delta between the optimal or normalresonate and anti-resonate frequencies f_(r0), f_(a0) and the probableresonate and anti-resonate frequencies f_(r0), f_(a0) for each AW module80A to 80C based on temperature. The control logic module 446 may usethe temperature delta or differential frequency or probable frequencyfor each AW module 80A to 80C to calculate a desired correction to beachieved by modulating a corresponding variable capacitor 98A to 98C.

In an embodiment the resonant and anti-resonant frequency variation 392Cfor an AW module 80A to 80C may be linear as shown in FIG. 22C. As shownin FIG. 22C for a positive temperature delta ΔT₀ from a nominaltemperature (such as room temperature), an AW module 80A to 80C resonantor anti-resonant frequency may be reduced by a predetermined numberbased on the slope of the temperature function 392C and magnitude of thetemperature delta ΔT°. Similarly, as shown in FIG. 22C for a negativetemperature delta −ΔT₀ from a nominal temperature (such as roomtemperature), an AW module 80A to 80C resonant or anti-resonantfrequency may be increased by a predetermined number based on the slopeof the temperature function 392C and magnitude of the negativetemperature delta −ΔT₀.

In an embodiment the control logic module 446 may combine manufacturingvariation deltas and temperature variation deltas provided by the PROM448 for a component 80A to 80C to determine or calculate an overalldelta or correction for corresponding variable capacitor 98A to 98C. Ina further embodiment the control logic module 446 may combinemanufacturing variation deltas and temperature variation deltas providedby the PROM 448 for a component 80A to 80C and a manufacturing variationdeltas provided by the PROM 448 for a corresponding variable capacitor98A to 98C to determine or calculate an overall delta or correction forthe corresponding variable capacitor 98A to 98C.

In an embodiment the PROM 448 data may be updatable via one or moremethods. In such an embodiment the PROM 448 characteristic data fortemperature or manufacturing variants for one or more components 80A to80C may be updated based on measured response or updated componenttesting. Similarly characteristic data for manufacturing variants forone or more capacitors 98A to 98C may be updated based on measuredresponse or updated component testing. In an embodiment the system 430control logic module 446 may include memory for storing temperature andmanufacturing characteristics for components 80A to 80C andmanufacturing characteristics for components 98A to 98C.

In order to produce AW modules 80A to 80C or variable capacitors 98A to98C or other components having possible variable system characteristicsdue to manufacturing a process 400 shown in FIG. 24 may be employed.FIG. 24 is a flow diagram of a component modeling, manufacturing, andconfiguration method according to various embodiments. In the process400 general component characteristics of an AW module 80A to 80C orvariable capacitor module 98A to 98C may be determined. In order todesign and manufacture an AW module 80A to 80C or variable capacitormodule 98A to 98C having desired parameters, test devices or relatedmodules may be produced and its characteristics evaluated (activity402). In particular, key or critical parameters may be checked for thetest devices including resonant and anti-resonant frequencies for an AWmodule related device and capacitance per unit area for a capacitor orseries of capacitors forming a digital, variable capacitor relateddevice.

Based on the test devices and a consistent or well behaved manufacturingprocess, probability curves or standard deviations for criticalparameters of the test devices may be determined. In an embodiment, aGaussian distribution may be applied and first standard deviations maybe determined for each critical parameter probability function. Usingcorrelation(s) between the test devices and an AW module or variablecapacitor module to be designed and produced, probability functions(such as each P_(r)(f) 392A, P_(a)(f) 392B, P_(c)(f) 392C) may bedetermined for the AW module or variable capacitor modules.

Based on the correlations between the test devices and resultantprobability functions for critical parameters, an AW module or capacitormodule may be designed (activity 404). Without compensating modules ormethods as recited by the present invention, an AW module or capacitormodule design parameters may be required to be loose to compensate forthe manufacturing variants. Employing the AW modules or capacitors in asystem 430 (with compensating modules) of the present invention mayenable tighter design parameters given the ability to compensate forvariants of the system 430. In an embodiment initial, final components(AW module or capacitor modules) based on a design may be produced(activity 406). Then, the initial components based on the associateddesign may be tested to determine the probability characteristics forkey or critical parameters (activity 408).

The determined probability characteristics for the initial final,designed components may be compared to the determined probabilitycharacteristics for the test devices. Where the characteristics arecorrelated as expected, larger quantities of the final, designcomponents may be produced and randomly tested (activity 412). Where themanufacturing process and source is controlled and well-behaved onlysparse or random components may need to be tested to confirm correlationto the previously determined probability functions P_(r)(f) 392A,P_(a)(f) 392B, P_(c)(f) 392C. For temperature sensitive componentsincluding AW modules, the temperature effects may also be modeled(activity 402) and considered during the component design (activity404). The temperature characteristics of initial, final components mayalso be determined (activity 408) prior to producing higher quantitiesof temperature sensitive components (activity 412). In an embodimenteach or batch groups of final, designed component (AW module or variablecapacitor module) may be tested and resultant probability functiondetermined for key or critical module characteristics. As noted thedetermined probability functions may be stored in a system 430 employinga corresponding module (80A to 80C, 98A to 98C).

In addition to adjusting for AW modules' performance variants duemanufacturing variants and operating temperature, impedances present ata filter module 452A input or output port may affect the filter module452A (FIG. 25A). In particular a filter module 452A may be designed fora particular load at its input node and a particular load at its outputnode. In an embodiment a differential between the target/designed load94A on the input node or the target/designed load 94B on the output nodeof a filter module 452A may affect its performance. FIG. 25A is blockdiagram of signal filter architecture 450A. Architecture 450A includes afilter module 452A, an input load 94A represented by a resistor and anoutput load 94B represented by a resistor. The filter module 452A may beconfigured to have a balanced load where the input load impedance 94Aand the output load impedance 94B are about equal and have apredetermined level such as 50 ohms in an embodiment.

The ratio between target loads 94A, 94B is related to the VoltageStanding Wave Ratio (VSWR) for the module. As noted, a filter module452A may be configured for a common VSWR of 1:1 (where the input load94A is about equal to the output load 94B). For a filter module 452Aconfigured for a VSWR of 1:1 an input-output mismatch (VSWR other than1:1) may result in a greater input signal insertion loss (greater filterpassband loss). FIG. 25B is a block diagram of a signal filterarchitecture 450B including a tunable filter module 452B that may beconfigured to reduce effects of impedance mismatches between loads 94A,94B (VSWR other than expected by filter module 452A, 452B nominally).

As shown in the FIG. 25B the signal filter architecture 450B includes aninput load 94A, an output load 94B, and a tunable filter module 452B.The tunable filter module 452B includes multiple tunable AW modules 96A,96C, 96D, 96E. Each tunable AW module 96A, 96C, 96D, 96E may include anAW device 80A, 80C, 80D, 80E, and 80F (represented by their electricalcomponent equivalents) coupled in parallel to a variable capacitor 98A,98C, 98D, 98E, and 98F, respectively. The tunable AW module 96C may becoupled to the input load 94A and ground. One or more sub-filter modules454A, 454B may be coupled between the tunable AW module 96C and theoutput load 94B.

Each sub-filter module 454A, 454B may include a first tunable AW module96C, 96E and a second tunable AW module 96D, 96F coupled to ground,respectively. As noted above an AW device 80A, 80C, 80D, 80E, 80F may bemodeled from a series of a inductor 86A, 86C, 86D, 86E, 86F, capacitor82A, 82C, 82D, 82E, 82F, resistor 84A, 84C, 84D, 84E, 84F coupled inparallel with a capacitor 81A, 81C, 81D, 81E, 81F, respectively. Eachvariable capacitor 98A, 98C, 98D, 98E, and 98F coupled in parallel withan AW device 80A, 80C, 80D, 80E, and 80F may be varied to affect thefilter characteristics of the AW device 80A, 80C, 80D, 80E, and 80F.

As noted previously a variable capacitor 98A, 98C, 98D, 98E, and 98F maybe employed to modulate an AW device 80A, 80C, 80D, 80E, and 80F toshift a resonant or anti-resonant frequency to select different bands,sub-bands, correct for manufacturing variants, and temperature shifts. Avariable capacitor 98A, 98C, 98D, 98E, and 98F may also be employed tomodulate an AW device 80A, 80C, 80D, 80E, and 80F to reduce a inputsignal insertion loss due to an unexpected or non-conforming VSWR (notequal to VSWR the filter model 452B was designed to process).

In an embodiment the filter module 452B may be designed for a VSWR ofabout 1:1 and the variable capacitors 98A, 98C, 98D, 98E, and 98F may bemodulated to reduce insertion loss due to a VSWR other than 1:1(non-forming). For example, FIG. 26A is a diagram of the frequencyresponse of the filter module 452B for a VSWR of 1:1 (nominal). As shownin FIG. 26A the insertion loss (passband attenuation) is about 0.5 dB.FIG. 26B is a diagram of the frequency response of the filter module452B for a VSWR of 1:1.5 and one or more variable capacitors 98A, 98C,98D, 98E, and 98F modulating a AW device 80A, 80C, 80D, 80E, and 80F,respectively to reduce the insertion loss. As shown in FIG. 26B theinsertion loss (passband attenuation) is about 0.68 dB. FIG. 26C is adiagram of the frequency response of the filter module 452B for a VSWRof 1:2 and one or more variable capacitors 98A, 98C, 98D, 98E, and 98Fmodulating a AW device 80A, 80C, 80D, 80E, and 80F, respectively toreduce the insertion loss. As shown in FIG. 26C the insertion loss(passband attenuation) is about 1 dB.

In another embodiment the PROM 448 of FIG. 23 may be configured toinclude variable capacitor deltas for various VSWR. A user may beindicate the output load and configure the PROM 448 accordingly. Inanother embodiment the control logic module may sense the output load,determine the VSWR differential, and choose the closest set of variablecapacitor deltas from the PROM 448. In a further embodiment a filtermodule 452B may be configured or designed for a nominal VSWR (medianrelative to possible VSWR that the filter module 452B may experience).For example in architecture 450B, VSWRs of 1:1, 1:1.5 and 1:2 may beexpected. The filter module 452B may be configured or designed to beoptimal for a VSWR of 1:1.5 and the variable capacitors 98A, 98C, 98D,98E, and 98F may be adjusted to modulate the AW device 80A, 80C, 80D,80E, and 80F, respectively when the VSWR is 1:1 or 1:2. In a furtherembodiment a variable capacitor may be placed in series with a AW module80C, 80F (or 80A, 80E) (such as capacitor 98C in FIG. 20A). The variablecapacitor in series with an AW module 80C, 80F may be modulated tocompensate for loads 94A, 94B other than the target/designed loads ofthe filter module 450B.

FIG. 27A is a diagram of the frequency response of the filter module452A for a VSWR of 1:1 where the filter module 452B is optimized forVSWR of 1:1, 1:1.5, and 1:2 and one or more variable capacitors 98A,98C, 98D, 98E, and 98F modulate a AW device 80A, 80C, 80D, 80E, and 80F,respectively to reduce the insertion loss for VSWR 1:1. As shown in FIG.27A the insertion loss (passband attenuation) is about 0.65 dB. FIG. 27Bis a diagram of the frequency response of the filter module 452B for aVSWR of 1:1.5 where the filter module 452A is optimized for VSWR of 1:1,1:1.5, and 1:2 and one or more variable capacitors 98A, 98C, 98D, 98E,and 98F modulate a AW device 80A, 80C, 80D, 80E, and 80F, respectivelyto reduce the insertion loss for VSWR 1:1.5. As shown in FIG. 27B theinsertion loss (passband attenuation) is about 0.62 dB. FIG. 27C is adiagram of the frequency response of the filter module 452B for a VSWRof 1:2 where the filter module 452B is optimized for VSWR of 1:1, 1:1.5,and 1:2 and one or more variable capacitors 98A, 98C, 98D, 98E, and 98Fmodulate a AW device 80A, 80C, 80D, 80E, and 80F, respectively to reducethe insertion loss for VSWR 1:2. As shown in FIG. 27C the insertion loss(passband attenuation) is about 0.69 dB.

As shown in FIG. 26A to 26C the average insertion loss is about 0.72 dBfor a system designed for a VSWR 1:1 and adjusted for VSWR of 1:1.5 and1:2. As shown in FIG. 27A to 27C the average insertion loss is about0.65 dB for a system optimized for a range of VSWR from 1:1 to 1:2 andadjusted for VSWR of 1:1.0, 1:1.5, and 1:2. The insertion loss of thefilter module 452B optimized for VSWR 1:1 has a lower insertion loss forVSWR 1:1 than the insertion loss for the filter module 452B optimizedfor a range of VSWR from 1:1 to 1:2 (0.5 dB versus 0.65 db) even withvariable capacitor modulation. Accordingly different filter modules 452Bfor VSWR 1:1 optimization or a range of VSWR may be selected as afunction of the expected range of VSWR in a system implementation andminimal acceptable insertion loss criteria.

As noted the VSWR is based on the balance between the input load andoutput load of a system. As shown in FIG. 1A and FIG. 28A, a poweramplifier 12 may, in part provide a load to filter module 452A (FIG.28A). Power amplifiers 12 commonly produce very low impedance. In orderto provide a desired input impedance to the filter module 452A (FIG. 28)or RF switch 40 (FIG. 1A), one or more elements forming an impedancematching module 470A may be placed between the PA 12 and filter module462A. The impedance matching module 470A may provide the expectedimpedance at the input port of a filter module 462A. When the filtermodule 462A is tunable and support filtering different frequency bands,the matching module 470A may not be effective for all the variousoperating/filtering modes of the tunable filter module 462A.

FIG. 28A is a block diagram of a filter system architecture 460Aaccording to various embodiments. Architecture 460A includes a PA 12, animpedance matching module 470A and a tunable/switchable filter module462A. The impedance matching module 470A couples the PA 12 to thetunable/switchable filter module 462A. In an embodiment thetunable/switchable filter module 462A includes a variable capacitorcontrol signal SPI and a band select signal. The tunable/switchablefilter module 462A may produce or switch between different frequencyresponses to process different frequency spectrum or bands. In anembodiment, the impedance matching module 470A may include an inductor464A. The PA 12 may receive power via input VDD in an embodiment.

The inductor 464A may provide the impedance matching function of theimpedance matching module 470A. In an embodiment the inductor may beabout a 2 to 3 nH inductor. FIG. 28B is a block diagram of atunable/switchable signal filter module 462B that may be configured tooperate in multiple bands and provide impedance matching with thematching module 470A. In an embodiment the filter module 462B may beconfigured to operate in evolved UMTS Terrestrial Radio Access Networke-UTRAN Long Term Evolution (LTE) bands, in particular bands 13 and 17.LTE band 13 may have a transmit band from 776 MHz to 787 MHz and areceive band from 746 MHz to 757 MHz. LTE band 17 may have a transmitband from 704 MHz to 716 MHz and a receive band from 734 MHz to 746 MHz.LTE Bands 13 and 17 are adjacent, tight bands.

As shown in the FIG. 28B tunable/switchable filter module 462B includesmultiple tunable AW modules 476C, 476D, 476F and multipletunable/switchable AW modules 476A, 476E. Tunable AW module 476C mayinclude AW devices 80C and 80E coupled in parallel, the set coupled inparallel to a variable capacitor 98C. The tunable AW module 476C may becoupled to the impedance matching module 470A and ground. Tunable AWmodule 476D, 476F may include an AW device 80D, 80G coupled in parallelto a variable capacitor 98D, 98F, respectively. One or more sub-filtermodules 474A, 474B may be coupled between the tunable AW module 96C andthe output load 94B.

Each sub-filter module 474A, 474B may include a first tunable/switchableAW module 476A, 476E and a second tunable AW module 476D, 476F coupledto ground, respectively. Tunable AW module 476A may include AW device80A in series with a switch 472B coupled in parallel to AW device 80F inseries with a switch 472A, the set coupled in parallel to a variablecapacitor 98A. Tunable AW module 476E may include AW device 80H inseries with a switch 472C coupled in parallel to AW device 80I in serieswith a switch 472D, the set coupled in parallel to a variable capacitor98E.

In a first mode the switches 474A to 474D may operate to switch AWmodule 80A and AW module 80H on (closed) and AW module 80F and AW module80I off (switch open) for band 13 or 17. In a second mode the switches474A to 474D may operate to switch AW module 80A and AW module 80H off(switch open) and AW module 80F and AW module 80I on or active (switchclosed) for the other of band 13 or 17. The variable capacitors 98A,98E, 98F, and 98D may be employed to adjust the operation of the AWmodules 80F, 80A, 80I, 80H, 80G, and 80D to correct for temperature,output impedance, and manufacturing variants. It is noted that variablecapacitor 98A modulates AW module 80A or 80F (is shared) and variablecapacitor 98E modulates AW module 80H or 80I (is shared).

The variable capacitor 98C may be modulated to provide impedancematching between the filter module 462B and the impedance matchingmodule 470A. FIG. 29A is a diagram of the frequency response of thetunable/switchable filter module 462B operating in a first mode to passsignals for LTE band 17 in an embodiment. FIG. 29B is a diagram of thefrequency response of the tunable/switchable filter module 462Boperating in a second mode to pass signals for LTE band 13 in anembodiment. In an embodiment the parallel combination of AW modules 80Cand 80E are configured to resonate about the LTE band 17 and therebyprovide rejection below LTE band 17 and between LTE band 17 and 13. Thevariable capacitor 98C may also tune the anti-resonant point between LTEband 17 and 13 as a function of the mode of operation (mode 1 or mode2).

In an embodiment the switches 472A to 472D may be comprised of stackedCMOS FETs to pass the PA amplified signals. The use of multiplesub-filters 474A, 474B in series may reduce the stack size and poweracross the switches 474A to 474D as the signal is shared across thesub-filters. In a further embodiment the capacitors 98A and 98E may befixed. Their capacitance may be preset based on known manufacturingvariants, operating temperature variants, and impedance matching(output) corrections that are fixed for the filter module 462B. Inanother embodiment of all the variable capacitors 98A to 98G describedin the application capacitance range and granularity may be varied asfunction of corrections needed to maintain the associated AW modules 80Ato 80G nominal resonant and anti-resonant frequencies within acceptabletolerances. The corrections may be known or calculated based on the AWmodules 80A to 80G known manufacturing and operating temperaturevariants and output impedance compensation conditions.

Applications that may include the novel apparatus and systems of variousembodiments include electronic circuitry used in high-speed computers,communication and signal processing circuitry, modems, single ormulti-processor modules, single or multiple embedded processors, dataswitches, and application-specific modules, including multilayer,multi-chip modules. Such apparatus and systems may further be includedas sub-components within a variety of electronic systems, such astelevisions, cellular telephones, personal computers (e.g., laptopcomputers, desktop computers, handheld computers, tablet computers,etc.), workstations, radios, video players, audio players (e.g., mp3players), vehicles, medical devices (e.g., heart monitor, blood pressuremonitor, etc.) and others. Some embodiments may include a number ofmethods.

It may be possible to execute the activities described herein in anorder other than the order described. Various activities described withrespect to the methods identified herein can be executed in repetitive,serial, or parallel fashion.

A software program may be launched from a computer-readable medium in acomputer-based system to execute functions defined in the softwareprogram. Various programming languages may be employed to createsoftware programs designed to implement and perform the methodsdisclosed herein. The programs may be structured in an object-orientatedformat using an object-oriented language such as Java or C++.Alternatively, the programs may be structured in a procedure-orientatedformat using a procedural language, such as assembly or C. The softwarecomponents may communicate using a number of mechanisms well known tothose skilled in the art, such as application program interfaces orinter-process communication techniques, including remote procedurecalls. The teachings of various embodiments are not limited to anyparticular programming language or environment.

The accompanying drawings that form a part hereof show, by way ofillustration and not of limitation, specific embodiments in which thesubject matter may be practiced. The embodiments illustrated aredescribed in sufficient detail to enable those skilled in the art topractice the teachings disclosed herein. Other embodiments may beutilized and derived there-from, such that structural and logicalsubstitutions and changes may be made without departing from the scopeof this disclosure. This Detailed Description, therefore, is not to betaken in a limiting sense, and the scope of various embodiments isdefined only by the appended claims, along with the full range ofequivalents to which such claims are entitled.

Such embodiments of the inventive subject matter may be referred toherein individually or collectively by the term “invention” merely forconvenience and without intending to voluntarily limit the scope of thisapplication to any single invention or inventive concept, if more thanone is in fact disclosed. Thus, although specific embodiments have beenillustrated and described herein, any arrangement calculated to achievethe same purpose may be substituted for the specific embodiments shown.This disclosure is intended to cover any and all adaptations orvariations of various embodiments. Combinations of the aboveembodiments, and other embodiments not specifically described herein,will be apparent to those of skill in the art upon reviewing the abovedescription.

The Abstract of the Disclosure is provided to comply with 37 C.F.R.§1.72(b), requiring an abstract that will allow the reader to quicklyascertain the nature of the technical disclosure. It is submitted withthe understanding that it will not be used to interpret or limit thescope or meaning of the claims. In the foregoing Detailed Description,various features are grouped together in a single embodiment for thepurpose of streamlining the disclosure. This method of disclosure is notto be interpreted to require more features than are expressly recited ineach claim. Rather, inventive subject matter may be found in less thanall features of a single disclosed embodiment. Thus the following claimsare hereby incorporated into the Detailed Description, with each claimstanding on its own as a separate embodiment.

What is claimed is:
 1. An electrical signal processing system,including: a first filter module for providing a switchable pass-bandand a tunable rejection band, the first filter module comprising: afirst acoustic wave resonator (AWR), the first AWR having a resonantfrequency (RFA1) and an anti-resonant frequency (AFA1); a first switchcoupled in series with the first AWR, wherein the first AWR isinoperative when the first switch is opened and active when the firstswitch is closed; a second AWR, the second AWR having a resonantfrequency (RFA2) different from RFA1, and an anti-resonant frequency(AFA2) different from AFA1; a second switch coupled in series with thesecond AWR, wherein the second AWR is inoperative when the second switchis opened and active when the second switch is closed, the seriescoupled first switch and first AWR coupled in parallel to the seriescoupled second switch and second AWR; a first capacitor module coupledin parallel to a) the series coupled first switch and first AWR and b)the series coupled second switch and second AWR, the first capacitormodule modifying the transduction of the electrical signal by one of thefirst AWR and the second AWR when the corresponding one of the firstswitch and the second switch is closed; and an inversion module coupledto the first filter module to provide an inversion functionality.
 2. Theelectrical signal processing system of claim 1, wherein the first filtermodule filters the electrical signal.
 3. The electrical signalprocessing system of claim 2, further including a second filter modulewith one end coupled to the first filter module and another end coupledto ground, the second filter module comprising a third AWM and a secondcapacitor arranged to operate in parallel with the third AWM.
 4. Theelectrical signal processing system of claim 3, wherein each of thefirst and second capacitors is a variable capacitor.
 5. The electricalsignal processing system of claim 4, wherein the second filter module iscoupled to an input side of the first filter module and the inversionmodule is coupled to an output side of the first filter module.
 6. Theelectrical signal processing system of claim 4, wherein the first filtermodule is operative as a movable, switchable pass-band and tunablerejection band filter, and the second filter module is operative as afixed high rejection and tunable pass-band filter.
 7. The electricalsignal processing system of claim 1, wherein the first capacitor moduleincludes at least two selectable capacitors.
 8. The electrical signalprocessing system of claim 1, wherein the first capacitor module isvariable having at least a first capacitance and a second capacitance,wherein the value of the first capacitance is an integer multiple of thevalue of the second capacitance.
 9. The electrical signal processingsystem of claim 1, wherein the first capacitor module is a variablecapacitor.
 10. The electrical signal processing system of claim 1,wherein the first AWR has a first resonant frequency and a firstanti-resonant frequency, the second AWR having a second resonantfrequency and second anti-resonant frequency, the inversion filtercomprising two capacitors configured to provide a negative capacitancevalue and a third capacitor configured to provide a positive capacitancevalue.
 11. The electrical signal processing system of claim 10, whereinthe first capacitor module modifies at least: a) one of the firstresonant frequency and the first anti-resonant frequency, and b) one ofthe second resonant frequency and the second anti-resonant frequency,and further wherein the inversion filter is configured as a K filter.12. The electrical signal processing system of claim 10 wherein the twocapacitors configured to provide the negative capacitance value arecoupled in series with each other, and the third capacitor configured toprovide the positive capacitance value is coupled to a junction betweenthe first and the second capacitors.
 13. An electrical signal processingsystem, including: a first acoustic wave resonator (AWR), the AWR havinga resonant frequency (RFA1) and an anti-resonant frequency (AFA1); afirst variable capacitor module (FVCM) coupled one of in parallel to thefirst AWR and serially to the first AWR, the FVCM having a plurality ofselectable capacitances configurable for modifying RFA1 and AFA1, thecapacitances selectable via a first control line; a temperaturedetection module, the temperature detection module providing anindication of the temperature at or near the first AWR; a memory devicecontaining characteristics data representing at least one of: a) ananti-resonant frequency probability function representing manufacturingvariations for the first AWR and b) a resonant frequency probabilityfunction representing manufacturing variations for the first AWR; and aprocessor receiving the temperature indication and selecting at leastone of the plurality of selectable capacitances via the first controlline based at least on one of: i) the temperature indication obtainedfrom the temperature detection module and ii) the characteristic dataobtained by accessing and reading the memory device.
 14. The electricalsignal processing system of claim 13, the first AWR configured as afilter for filtering the electrical signal.
 15. The electrical signalprocessing system of claim 14, wherein the RFA1 and AFA1 vary as afunction of the temperature of at least one of the first AWR and theFVCM.
 16. The electrical signal processing system of claim 15, whereinone or more of the plurality of selectable capacitances is selectablefor modifying one of the RFA1 and the AFA1.
 17. The electrical signalprocessing system of claim 15, wherein the FVCM is coupled in parallelto the first AWR.
 18. The electrical signal processing system of claim15, wherein the FVCM is coupled serially to the first AWR.
 19. Theelectrical signal processing system of claim 17, further comprising asecond variable capacitor module (SVCM) coupled serially to the firstAWR, the SVCM having a plurality of selectable capacitances formodifying the RFA1, the capacitances selectable via a second controlline and the processor receiving the temperature indication andselecting one of the plurality of SVCM selectable capacitances via thesecond control line based at least on part on the temperatureindication.
 20. The electrical signal processing system of claim 19,wherein the FVCM includes at least two selectable capacitors and theSVCM includes at least two selectable capacitors.
 21. The electricalsignal processing system of claim 19, wherein the FVCM has at least afirst capacitance and a second capacitance and the value of the firstcapacitance is an integer multiple of the value of the secondcapacitance.
 22. The electrical signal processing system of claim 21,wherein the SVCM has at least a first capacitance and a secondcapacitance and the value of the first capacitance is an integermultiple of the value of the second capacitance.
 23. The electricalsignal processing system of claim 13, further comprising a second AWRcoupled to the first AWR and ground, the second AWR having a resonantfrequency (RFA2) and an anti-resonant frequency (AFA2).
 24. Theelectrical signal processing system of claim 23, further comprising athird variable capacitor module (TVCM) coupled one of in parallel to thesecond AWR and serially to the second AWR, the TVCM having a pluralityof selectable capacitances configurable for modifying one of the RFA2and the AFA2, the capacitances selectable via a third control line, theprocessor receiving the temperature indication and selecting one of theplurality of TVCM selectable capacitances via the third control linebased at least on part on the temperature indication.
 25. The electricalsignal processing system of claim 24, the RFA1 creating an effectivepassband and the AFA1 creating an effective stopband and the AFA2creating an effective passband and the RFA2 creating an effectivestopband.
 26. The electrical signal processing system of claim 25, thecombination of the first AWR and the second AWR forming one of abandpass filter and a band reject filter.
 27. The electrical signalprocessing system of claim 25, wherein the combination of the first AWR,the FVCM, the second AWR, and the TVCM form one of a tunable bandpassfilter and a band reject filter.
 28. The electrical signal processingsystem of claim 13, wherein the processor receives a FVCM capacitanceselection signal and the processor selecting one of the plurality ofFVCM selectable capacitances via the first control line based further onthe FVCM capacitance selection signal.
 29. The electrical signalprocessing system of claim 13, wherein the processor includestemperature variation data for the first AWR and the processor selectsone of the plurality of FVCM selectable capacitances via the firstcontrol line based further on the first AWR temperature variation data.30. The electrical signal processing system of claim 24, wherein theprocessor includes temperature variation data for the second AWR and theprocessor selects one of the plurality of TVCM selectable capacitancesvia the third control line based further on the second AWR temperaturevariation data.
 31. The electrical signal processing system of claim 13,the memory device further containing characteristics data representingat least one of: iii) possible resonant and anti-resonant frequenciesfor the first AWR, and iv) a delta between optimal and probable resonantand anti-resonant frequencies for the first AWR based on temperaturevalues.
 32. The electrical signal processing system of claim 13, thememory device containing characteristics data representing theanti-resonant frequency probability function representing manufacturingvariations for the first AWR.
 33. An electrical signal processingsystem, including: a first acoustic wave resonator (AWR); a first switchcoupled in parallel to the first AWR, the first switch bypassing thefirst AWR when closed, the first AWR filtering electrical signals whenthe first switch is open and the first AWR having a resonant frequency(RFA1) and an anti-resonant frequency (AFA1); a second AWR, the secondAWR serially coupled to the first AWR; and a second switch coupled inparallel to the second AWR, the second switch bypassing the second AWRwhen closed, the second AWR filtering electrical signals when the secondswitch is open and the second AWR having a resonant frequency (RFA2) andan anti-resonant frequency (AFA2), wherein the RFA1 and RFA2 are offsetin frequency; and a third AWR, the third AWR coupled between the serialcoupling of the first AWR and the second AWR and to ground, the thirdAWR filtering electrical signals and having a) a resonant frequency(RFA3) creating an effective stopband and b) an anti-resonant frequency(AFA3) creating an effective passband, the combination of the first AWRand the third AWR forming a bandpass filter when the first switch isopen and the second switch is closed and the combination of the secondAWR and the third AWR forming a band reject filter when the first switchis closed and the second switch is open.
 34. The electrical signalprocessing system of claim 33, wherein the RFA1 has a frequencymagnitude and the offset in frequency is greater than 5% of the RFA1frequency magnitude.
 35. The electrical signal processing system ofclaim 34, wherein the RFA1 has a frequency magnitude and the offset infrequency is greater than 10% of the RFA1 frequency magnitude.
 36. Theelectrical signal processing system of claim 33, further comprising afirst capacitor module (FCM) coupled one of in parallel to the first AWRand serially to the first AWR, the FCM modifying one of the RFA1 andAFA1.
 37. The electrical signal processing system of claim 36, furthercomprising a second capacitor module (SCM) coupled one of in parallel tothe second AWR and serially to the second AWR, the SCM modifying one ofthe RFA2 and AFA2.
 38. The electrical signal processing system of claim33, further comprising a first capacitor module (FCM) coupled inparallel to the serial combination of the first AWR and the second AWR,the FCM modifying the AFA1 and the AFA2.
 39. The electrical signalprocessing system of claim 38, further comprising a second capacitormodule (SCM) coupled serially to the first AWR, the SCM modifying theRFA1.
 40. The electrical signal processing system of claim 33, furthercomprising a first variable capacitor module (FVCM) coupled one of inparallel to the first AWR and serially to the first AWR, the FVCMvariably modifying one of the RFA1 and AFA1.
 41. The electrical signalprocessing system of claim 40, further comprising a second variablecapacitor module (SVCM) coupled one of in parallel to the second AWR andserially to the second AWR, the SVCM variably modifying one of the RFA2and AFA2.
 42. The electrical signal processing system of claim 33,further comprising a first variable capacitor module (FVCM) coupled inparallel to the serial combination of the first AWR and the second AWR,the FVCM variably modifying the AFA1 and the AFA2.
 43. The electricalsignal processing system of claim 42, further comprising a secondvariable capacitor module (SVCM) coupled serially to the first AWR, theSVCM variably modifying the RFA1.
 44. The electrical signal processingsystem of claim 40, wherein the FVCM is variable having at least a firstcapacitance and a second capacitance, wherein the value of the firstcapacitance is an integer multiple of the value of the secondcapacitance.
 45. The electrical signal processing system of claim 42,the combination of the first AWR, the FVCM, and the third AWR forming afirst variable filter when the first switch is open and the secondswitch is closed and the combination of the second AWR, the FVCM, andthe third AWR forming a second variable filter when the first switch isclosed and the second switch is open.
 46. The electrical signalprocessing system of claim 41, the combination of the first AWR, theFVCM, and the third AWR forming a first variable filter when the firstswitch is open and the second switch is closed and the combination ofthe second AWR, the SVCM, and the third AWR forming a second variablefilter when the first switch is closed and the second switch is open.47. An electrical signal processing system, including: a switchablepass-band and tunable rejection band filter module, comprising: a firstacoustic wave resonator (AWR); a first switch coupled serially to thefirst AWR, the first AWR is inoperative when the first switch is openedand active when the first switch is closed, the first AWR having aresonant frequency (RFA1) and an anti-resonant frequency (AFA1); asecond acoustic wave AWR; a second switch coupled serially to the secondAWR, wherein the second AWR is inoperative when the second switch isopened and active when the second switch is closed, the series coupledfirst switch and first AWR coupled in parallel to the series coupledsecond switch and second AWR, the second AWR having a resonant frequency(RFA2) and an anti-resonant frequency (AFA2), wherein the RFA1 and RFA2are offset in frequency; and a first variable capacitor coupled inparallel to the combination of the first AWR coupled serially to thefirst switch and to the combination of the second AWR coupled seriallyto the second switch, the first variable capacitor used for varying atleast one of the AFA1 and the AFA2 to configure the switchable pass-bandand tunable rejection band filter module; and a tunable filter module,comprising: a third AWR, the third AWR coupled to the first AWR and thesecond AWR and to ground, the third AWR filtering electrical signals andhaving a resonant frequency (RFA3) creating an effective stopband and ananti-resonant frequency (AFA3) creating an effective passband; and asecond variable capacitor coupled in parallel to the third AWR, thesecond variable capacitor used for varying the AFA3 to configure thetunable filter module.
 48. The electrical signal processing system ofclaim 47, wherein the RFA1 has a frequency magnitude and the offset infrequency is greater than 5% of the RFA1 frequency magnitude.
 49. Theelectrical signal processing system of claim 48, wherein the RFA1 has afrequency magnitude and the offset in frequency is greater than 10% ofthe RFA1 frequency magnitude.
 50. The electrical signal processingsystem of claim 47, the RFA1 creating an effective passband and the AFA1creating an effective stopband when the first switch is closed and theRFA2 creating an effective passband and the AFA2 creating an effectivestopband when the second switch is closed.
 51. The electrical signalprocessing system of claim 47, the combination of the first AWR and thethird AWR forming a first filter when the first switch is closed and thesecond switch is open and the combination of the second AWR and thethird AWR forming a second filter when the first switch is open and thesecond switch is closed.
 52. An electrical signal processing system,including: a fixed filter comprising a first acoustic wave resonator(AWR), the first AWR filtering electrical signals and the first AWRhaving a resonant frequency (RFA1) and an anti-resonant frequency(AFA1); a tunable filter having a tunable frequency response thatincludes a desirable passband and an undesirable passband the tunablefilter comprising a second AWR, the second AWR serially coupled to thefirst AWR for eliminating the undesirable passband, the second AWRfiltering electrical signals, and the second AWR having a resonantfrequency (RFA2) and an anti-resonant frequency (AFA2); and a firstvariable capacitor module (FVCM) coupled in parallel to the second AWR,the FVCM having a plurality of selectable capacitances, the capacitancesselectable via a first control line, and the FVCM variably modifying theAFA2, wherein the AFA1 of the first AWR in the fixed filter varies basedon temperature, wherein variably modifying the AF2 corrects for thetemperature variation.
 53. The electrical signal processing system ofclaim 52, further comprising a processor, the processor selecting one ofthe plurality of FVCM selectable capacitances via the first control lineto shift AFA2 based on AFA1.
 54. The electrical signal processing systemof claim 53, further comprising a temperature detection module providingan indication of the temperature at or near the first AWR and theprocessor selecting one of the plurality of FVCM selectable capacitancesvia the first control line to shift AFA2 based at least on part on thetemperature indication.
 55. The electrical signal processing system ofclaim 53, further comprising: a first switch coupled serially to thesecond AWR, the first switch disconnecting the second AWR when open, thesecond AWR filtering electrical signals when the first switch is closed;a third AWR; and a second switch coupled serially to the third AWR, thesecond switch disconnecting the third AWR when open, the third AWRfiltering electrical signals when the second switch is closed and thethird AWR having a resonant frequency (RFA3) and an anti-resonantfrequency (AFA3), wherein the RFA2 and RFA3 are offset in frequency andthe combination of the second AWR serially coupled to the first switchis parallel to the to the combination of the first AWR serially coupledto the second switch.
 56. The electrical signal processing system ofclaim 54, further comprising a second capacitor module (SCM) coupledserially to the second AWR, the SCM modifying the RFA2.
 57. Theelectrical signal processing system of claim 55, further comprising asecond variable capacitor module (SVCM) coupled one of in parallel tothe third AWR and serially to the third AWR, the SVCM variably modifyingone of the RFA2 and AFA2.
 58. The electrical signal processing system ofclaim 55, wherein the first variable capacitor module (FVCM) is coupledin parallel to the combination of the second AWR serially coupled to thefirst switch and to the combination of the third AWR serially coupled tothe second switch, the FVCM variably modifying the AFA2 and the AFA3.59. The electrical signal processing system of claim 58, furthercomprising a second variable capacitor module (SVCM) coupled serially tothe second AWR, the SVCM variably modifying the RFA2.
 60. The electricalsignal processing system of claim 59, the RFA2 creating an effectivepassband and the AFA2 creating an effective stopband when the firstswitch is closed and the RFA3 creating an effective passband and theAFA3 creating an effective stopband when the second switch is closed.61. The electrical signal processing system of claim 52, wherein theFVCM has at least a first capacitance and a second capacitance, whereinthe value of the first capacitance is an integer multiple of the valueof the second capacitance.
 62. The electrical signal processing systemof claim 55, further comprising a fourth AWR, the fourth AWR coupled tothe second AWR and the third AWR and to ground, the fourth AWR filteringelectrical signals and the fourth AWR having a resonant frequency (RFA4)and an anti-resonant frequency (AFA4) and the AFA4 creating an effectivepassband and the RFA4 creating an effective stopband.
 63. The electricalsignal processing system of claim 62, the combination of the first AWR,the second AWR, the FVCM, and the fourth AWR forming a first filter whenthe first switch is closed and the second switch is open and thecombination of the first AWR, the third AWR and the fourth AWR forming asecond filter when the first switch is open and the second switch isclosed.
 64. The electrical signal processing system of claim 58, furthercomprising a fourth AWR, the fourth AWR coupled to the second AWR andthe third AWR and to ground, the fourth AWR filtering electrical signalsand the fourth AWR having a resonant frequency (RFA4) and ananti-resonant frequency (AFA4) and the AFA4 creating an effectivepassband and the RFA4 creating an effective stopband, and thecombination of the first AWR, the second AWR, the FVCM, and the fourthAWR forming a first variable filter when the first switch is closed andthe second switch is open and the combination of the first AWR, thethird AWR, the FVCM, and the fourth AWR forming a second variable filterwhen the first switch is open and the second switch is closed.
 65. Theelectrical signal processing system of claim 52, further comprising afifth acoustic wave AWR coupled serially to the first switch and inparallel to the second AWR, the first switch shorting the second AWR andthe fifth AWR when open, the fifth AWR filtering electrical signals whenthe first switch is closed and the fifth AWR having a resonant frequency(RFA5) and an anti-resonant frequency (AFA5).
 66. The electrical signalprocessing system of claim 65, further comprising a sixth AWR coupledserially to the second switch and in parallel to the third AWR, thesecond switch shorting the third AWR and the sixth AWR when open, thesixth AWR filtering electrical signals when the second switch is closedand the sixth AWR having a resonant frequency (RFA6) and ananti-resonant frequency (AFA6).
 67. The electrical signal processingsystem of claim 65, wherein the RFA2 has a frequency magnitude and theoffset in frequency between RFA2 and RFA5 is greater than 10% of theRFA2 frequency magnitude.
 68. The electrical signal processing system ofclaim 66, wherein the RFA3 has a frequency magnitude and the offset infrequency between RFA3 and RFA6 is greater than 10% of the RFA3frequency magnitude.
 69. The electrical signal processing system ofclaim 57, wherein the SVCM plurality of selectable capacitances areselectable via a second control line and the processor selects one ofthe plurality of SVCM selectable capacitances via the second controlline to shift AFA3.
 70. The electrical signal processing system of claim69, further comprising a temperature detection module providing anindication of the temperature at or near the third AWR and the processorselects one of the plurality of SVCM selectable capacitances via thesecond control line to shift AFA3 based at least on part on thetemperature indication.
 71. The electrical signal processing system ofclaim 57, wherein the processor includes temperature variation data forthe second AWR and the processor selects one of the plurality of FVCMselectable capacitances via the first control line based at least onpart on the temperature indication and the second AWR temperaturevariation data.
 72. An electrical signal processing system, including: afirst acoustic wave resonator (AWR), the AWR having a resonant frequency(RFA1) and an anti-resonant frequency (AFA1); a first variable capacitormodule (FVCM) coupled one of in parallel to the first AWR and seriallyto the first AWR, the FVCM having a plurality of selectable capacitancesconfigurable for modifying RFA1 and AFA1, the capacitances selectablevia a first control line; a memory device having stored thereon,statistical data representing at least one of: a) an anti-resonantfrequency probability function representing manufacturing variations forthe first AWR and b) a resonant frequency probability functionrepresenting manufacturing variations for the first AWR; and a processorselecting at least one of the plurality of selectable capacitances viathe first control line based at least in part on the stored statisticaldata.
 73. The electrical signal processing system of claim 72, the firstAWR configured as a filter for filtering the electrical signal.
 74. Theelectrical signal processing system of claim 73, the FVCM coupled inparallel to the first AWR.
 75. The electrical signal processing systemof claim 73, further comprising a temperature detection module, thetemperature detection module providing an indication of the temperatureat or near the first AWR, and the processor receiving the temperatureindication and selecting one of the plurality of FVCM selectablecapacitances via the first control line further based.
 76. Theelectrical signal processing system of claim 74, comprising a secondvariable capacitor module (SVCM) coupled serially to the first AWR, theSVCM having a plurality of selectable capacitances for modifying theRFA1, the capacitances selectable via a second control line and theprocessor selecting one of the plurality of SVCM selectable capacitancesvia the second control line based at least on part on at the storedstatistical data.
 77. The electrical signal processing system of claim76, wherein the FVCM has at least a first capacitance and a secondcapacitance and the value of the first capacitance is an integermultiple of the value of the second capacitance.
 78. The electricalsignal processing system of claim 76, wherein the SVCM has at least afirst capacitance and a second capacitance and the value of the firstcapacitance is an integer multiple of the value of the secondcapacitance.
 79. The electrical signal processing system of claim 72,further comprising a second AWR coupled to the first AWR and ground, thesecond AWR having a resonant frequency (RFA2) and an anti-resonantfrequency (AFA2).
 80. The electrical signal processing system of claim79, further comprising a third variable capacitor module (TVCM) coupledone of in parallel to the second AWR and serially to the second AWR, theTVCM having a plurality of selectable capacitances configurable formodifying one of the RFA2 and the AFA2, the capacitances selectable viaa third control line, the processor selecting one of the plurality ofTVCM selectable capacitances via the third control line based at leaston part on the stored statistical data.
 81. The electrical signalprocessing system of claim 79, the RFA1 creating an effective passbandand the AFA1 creating an effective stopband and the AFA2 creating aneffective passband and the RFA2 creating an effective stopband.
 82. Theelectrical signal processing system of claim 81, the combination of thefirst AWR and the second AWR forming one of a bandpass filter and a bandreject filter.
 83. The electrical signal processing system of claim 81,wherein the combination of the first AWR, the FVCM, the second AWR, andthe TVCM form one of a tunable bandpass filter and a band reject filter.84. The electrical signal processing system of claim 72, wherein theprocessor receives a FVCM capacitance selection signal and the processorselecting one of the plurality of FVCM selectable capacitances via thefirst control line further based the FVCM capacitance selection signal.85. An electrical signal processing system, including: a tunable filtermodule comprising a first variable capacitor module (FVCM) coupled oneof in parallel to a first acoustic wave resonator (AWR) and serially tothe first AWR, the FVCM having a plurality of selectable capacitances,the capacitances selectable via a first control line; a memory devicehaving stored thereon, variable capacitor deltas for various voltagestanding wave ratios, the voltage standing wave ratios related to ratiosbetween target input and output impedances for the tunable filtermodule; and a control logic module configured for using the memorydevice to select at least one of the plurality of selectablecapacitances via the first control line based at least on part on thevariable capacitor deltas stored in the memory device and a derivedvoltage standing wave ratios differential, wherein the first AWR isconfigured as a filter for filtering an electrical signal and having aresonant frequency (RFA1) and an anti-resonant frequency (AFA1)modifiable by configuring the plurality of selectable capacitances ofthe FVCM.
 86. The electrical signal processing system of claim 85, theFVCM coupled in parallel to the first AWR.
 87. The electrical signalprocessing system of claim 85, further comprising an output impedancedetection module, the output impedance detection module sensing acoupled output impedance at the first AWR and providing an indication ofthe coupled output impedance at the first AWR to the control logicmodule, the control logic module deriving the voltage standing waveratios differential based on the indication and selecting the at leastone of the plurality of selectable capacitances via the first controlline based on the differential.
 88. The electrical signal processingsystem of claim 86, further comprising a second variable capacitormodule (SVCM) coupled serially to the first AWR, the SVCM having aplurality of selectable capacitances for modifying the RFA1, thecapacitances selectable via a second control line.
 89. The electricalsignal processing system of claim 88, the control logic module selectingone of the plurality of SVCM selectable capacitances via the secondcontrol line based at least on part on the output impedance indicationand at the stored output impedance data.
 90. The electrical signalprocessing system of claim 88, wherein the FVCM has at least a firstcapacitance and a second capacitance and the value of the firstcapacitance is an integer multiple of the value of the secondcapacitance.
 91. The electrical signal processing system of claim 88,wherein the SVCM has at least a first capacitance and a secondcapacitance and the value of the first capacitance is an integermultiple of the value of the second capacitance.
 92. The electricalsignal processing system of claim 85, further comprising a second AWR,the second AWR coupled to the first AWR and to ground, the second AWRhaving a resonant frequency (RFA2) and an anti-resonant frequency(AFA2).
 93. The electrical signal processing system of claim 92, furthercomprising a third variable capacitor module (TVCM) coupled one of inparallel to the second AWR and serially to the second AWR, the TVCMhaving a plurality of selectable capacitances for modifying one of theRFA2 and the AFA2, the capacitances selectable via a third control line.94. The electrical signal processing system of claim 92, the RFA1creating an effective passband and the AFA1 creating an effectivestopband and the AFA2 creating an effective passband and the RFA2creating an effective stopband.
 95. The electrical signal processingsystem of claim 91, the combination of the first AWR and the second AWRforming one of a bandpass filter and a band reject filter.
 96. Theelectrical signal processing system of claim 91, wherein the combinationof the first AWR, the FVCM, the second AWR, and the TVCM form one of atunable bandpass filter and a band reject filter.
 97. The electricalsignal processing system of claim 91, wherein the control logic modulereceives a FVCM capacitance selection signal and the processor selectingone of the plurality of FVCM selectable capacitances via the firstcontrol line based at least on part on the stored output impedance dataand the FVCM capacitance selection signal.